AUTOMOTIVE GRADE AUIRGDC0250 Features C Low V Planar IGBT Technology CE (on) V = 1200V Low Switching Losses CES Square RBSOA I = 81A T = 100C C C G 100% of the Parts Tested for ILM V typ. = 1.47V 33A CE(on) Positive V Temperature Coefficient E CE (on) n-channel Reflow Capable per JDSD22-A113 Lead-Free, RoHS Compliant Automotive Qualified * Benefits Device optimized for soft switching applications High Efficiency due to Low V , low switching losses CE(on) Rugged transient performance for increased reliability Super-TO-220 Excellent current sharing in parallel operation AUIRGDC0250 Low EMI G C E Application PTC Heater Gate Collector Emitter Relay Replacement Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGDC0250 Super-TO-220 Tube 50 AUIRGDC0250 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air ) is 25C, unless otherwise specified. conditions. Ambient temperature (T A Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES I T = 25C Continuous Collector Current 141 C C I T = 100C Continuous Collector Current 81 C C I Pulse Collector Current, V = 15V 99 A CM GE I Clamped Inductive Load Current, V = 20V 99 LM GE V Continuous Gate-to-Emitter Voltage 20 GE V Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 543 D C W P T = 100C Maximum Power Dissipation 217 D C T Operating Junction and -55 to +150 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.0 63 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) 0.23 R (IGBT) JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 C/W CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 62 R JA *Qualification standards can be found at www.infineon.com V 2.6 1 2019-04-18 AUIRGDC0250 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A (BR)CES GE C V /T Temperature Coeff. of Breakdown Voltage 1.2 V/C V = 0V, I = 1mA (25C-150C) GE C (BR)CES J V Collector-to-Emitter Saturation Voltage 1.47 1.8 I = 33A, V = 15V, T = 25C CE(on) C GE J V 1.56 I = 33A, V = 15V, T = 150C C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 250A GE(th) CE GE C V /TJ Threshold Voltage temp. coefficient -15 mV/C V = V , I = 250A (25C-150C) GE(th) CE GE C gfe Forward Transconductance 30 S V = 50V, I = 33A,PW = 20S CE C I Collector-to-Emitter Leakage Current 250 V = 0V, V = 1200V, T = 25C CES GE CE J A 1000 V = 0V, V = 1200V,T = 150C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 151 227 I = 33A g C Q Gate-to-Emitter Charge (turn-on) 26 39 nC V = 15V ge GE Q Gate-to-Collector Charge (turn-on) 62 93 V = 600V gc CC E Turn-Off Switching Loss 15 16 mJ I = 33A, V = 600V, V = 15V off C CC GE t Turn-Off delay time 485 616 R = 5 , L = 400H, T = 25C d(off) G J ns t Fall time 1193 1371 Energy losses include tail f E Turn-Off Switching Loss 29 mJ I = 33A, V = 600V, V = 15V off C CC GE t Turn-Off delay time 689 R = 5 , L = 400H, T = 150C d(off) G J ns t Fall time 2462 Energy losses include tail f C Input Capacitance 3804 V = 0V ies GE C Output Capacitance 161 V = 30V pF oes CC C Reverse Transfer Capacitance 31 f = 1.0Mhz res T = 150C, I = 99A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp 1200V CC Rg = 5 , V = +20V to 0V GE Notes: V = 80% (V ), V = 20V, L = 400H, R = 5 . CC CES GE G Pulse width limited by max. junction temperature. R is measured at T approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. 2 V 2.6 2019-04-18