Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. Features AECQ101 Qualified 50 A, 650 V, Maximum Junction Temperature: T = 175C J V = 1.6 V CESat Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 50 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM Fast Switching Tight Parameter Distribution G RoHS Compliant E Typical Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Totem Pole Bridgeless PFC PTC G MAXIMUM RATINGS C E Rating Symbol Value Unit TO2473L CollectortoEmitter Voltage V 650 V CES CASE 340CX GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 MARKING DIAGRAM Collector Current (Note 1) T = 25C I 80 A C C T = 100C 50 C Pulsed Collector Current (Note 2) I 200 A LM Pulsed Collector Current (Note 3) I 200 A CM &Z&3&K AFGHL Diode Forward Current (Note 1) I A F 50T65SQD T = 25C 80 C T = 100C 30 C Pulsed Diode Maximum Forward Current I 200 A FM Maximum Power Dissipation T = 25C P 268 W D C T = 100C 134 C &Z = Assembly Plant Code Operating Junction T , T 55 to C J STG &3 = 3Digit Date Code / Storage Temperature Range +175 &K = 2Digit Lot Traceability Code Maximum Lead Temp. for Soldering T 300 C L AFGHL50T65SQD = Specific Device Code Purposes, 1/8 from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire Device Package Shipping 2. V = 400 V, V = 15 V, I = 200 A, R = 15 , Inductive Load CC GE C G AFGHL50T65SQD TO 247 3L 30 Units / Rail 3. Repetitive Rating: pulse width limited by max. Junction temperature Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: January, 2020 Rev. 1 AFGHL50T65SQD/DAFGHL50T65SQD THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.56 C/W JC Thermal resistance junctiontocase, for Diode R 1.25 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of V = 0 V, 0.6 V/C GE BV CES Breakdown Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collector V = 20 V, I 400 nA GE GES emitter shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 50 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 50 A, T = 175C 1.95 GE C J DYNAMIC CHARACTERISTICS V = 30 V, pF Input capacitance C 3258 CE ies V = 0 V, GE Output capacitance C 85 f = 1 MHz oes Reverse transfer capacitance C 11 res V = 400 V, nC Gate charge total Q 102 CE g I = 50 A, C Gatetoemitter charge Q 18 V = 15 V ge GE Gatetocollector charge Q 24 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 19 ns C d(on) V = 400 V, CC Rise time t 11 r I = 25 A, C R = 4.7 , G Turnoff delay time t 87 d(off) V = 15 V, GE Inductive Load Fall time t 5 f Turnon switching loss E 0.35 mJ on Turnoff switching loss E 0.12 off Total switching loss E 0.47 ts T = 25C, ns Turnon delay time t 20 C d(on) V = 400 V, CC Rise time t 28 I = 50 A, r C R = 4.7 , G Turnoff delay time t 81 d(off) V = 15 V, GE Inductive Load Fall time t 36 f Turnon switching loss E 0.95 mJ on Turnoff switching loss E 0.46 off Total switching loss E 1.41 ts www.onsemi.com 2