About IGBT Transistors

Sps IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SPT15N120T1T8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 6
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USD 1.3742

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SPF15N65T1T1TL


TO-220F-3 IGBTs ROHS
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SPS Availability : 0
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USD 0.5777

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SPF15N65T1T2TL


TO-220F-3 IGBTs ROHS
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SPS Availability : 0
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USD 0.6265

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SPT25N135F1AT8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 0
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USD 1.3391

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SPD15N65T1T0TL


TO-252-3 IGBTs ROHS
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USD 0.9093

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SPT10N120T1T8TL


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USD 1.2083

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SPT25N120U1T8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 0
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USD 2.0663

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SPT40N120F1CT8TL


TO-247-3 IGBTs ROHS
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USD 2.9663

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SPT40N120T1BT8TL


TO-247-3 IGBTs ROHS
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SPS Availability : 0
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USD 3.8228

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