About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWA30M65DF2


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 1.6706
Multiples of: 600

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STGF35HF60W


IGBT Transistors 35A 600V Ultrafast IGBT over 100kHz OP
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USD 1.69
Multiples of: 1

 600 V2.5 V20 V19 A100 nA40 W TO - 220 - 3 FPTube Through Hole - 55 C+ 150 CStgf35hf60w
STGW15H120F2


IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
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STMicroelectronics Availability : 0
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USD 1.7096
Multiples of: 1

Single1200 V2.1 V20 V30 A250 nA259 W TO - 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 CStgw15h120f2
STGW19NC60W


STMicroelectronics IGBT Transistors 19A 600V ULT FS IGBT
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USD 1.7523
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Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 C600 - 650V Igbts
STGD20N40LZ


STMicroelectronics IGBT Transistors Auto 390V IGBT Clamped 300mJ EAS
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STMicroelectronics Availability : 0
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USD 1.7753
Multiples of: 2500

Single425 V1.5 V16 V 625 uA Aec - Q101DPAK - 3ReelSiSmd/Smt125 W- 55 C+ 175 C300 - 400V Igbts
STGB20NC60V


IGBT Transistors 30 A 600V FAST IGBT
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STMicroelectronics Availability : 0
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USD 1.794
Multiples of: 1

Single600 V1.8 V+/- 20 V60 A 200 W D2PAK - 3ReelSiSmd/Smt200 W- 55 C+ 150 CStgb20nc60v
STGWT60H60DLFB


IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 0
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USD 1.7996
Multiples of: 1

Single600 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 55 C+ 175 CStgwt60h60dlfb
STGW40NC60KD


IGBT Transistors 40A - 600V Short circuit rugged IGBT
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USD 1.8316
Multiples of: 4

Single600 V +/- 20 V  250 W TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 CStgw40nc60kd
STGB8NC60KDT4


STMicroelectronics IGBT Transistors N Ch 100V 0.033 Ohm 25A Pwr MOSFET
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STMicroelectronics Availability : 0
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USD 1.8333
Multiples of: 25

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb8nc60kd
STGWT40H65DFB


IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
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USD 1.8371
Multiples of: 1

Single650 V1.6 V+/- 20 V80 A250 nA283 W TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 CStgwt40h65dfb
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