Xiner IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
XNA19N60T


IGBTs Field Stop 600V 19A D2pak RoHS
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USD 0.6737

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XNF6N60T


IGBTs Field Stop 600V 6A TO-220F RoHS
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USD 0.3569

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XNM6N60T


IGBTs Field Stop 600V 6A TO-252 RoHS
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USD 0.3717

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XNA6N60T


IGBTs Field Stop 600V 6A D2pak RoHS
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USD 0.4482

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XNF15N60T


IGBTs Field Stop 600V 15A TO-220F RoHS
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USD 0.6337

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XNA20N60T


IGBTs Field Stop 600V 20A D2pak RoHS
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USD 0.7454

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XNF20N60T


IGBTs Field Stop 600V 20A TO-220F RoHS
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XINER 0
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USD 0.8386

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XNF19N60T


IGBTs Field Stop 600V 19A TO-220F RoHS
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USD 0.9143

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XNS20N60T


IGBTs Field Stop 600V 20A TO-247 RoHS
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USD 0.9264

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XNS15N120T


IGBTs Field Stop 1200V 15A TO-247 RoHS
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USD 1.0375

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