The XNM6N60T is an Insulated Gate Bipolar Transistor (IGBT) with Field Stop technology manufactured by XINER. It is a three-terminal semiconductor switching device with a maximum collector-emitter voltage of 600V and collector current of 6A. It is supplied in a TO-252 RoHS package and is typically used for high-frequency applications. The device has a dielectric strength of 2500Vrms, a forward voltage drop of 2.15V, and a maximum junction temperature of 150 degrees Celsius. The IGBT also has a power dissipation of 3.9W. It has a fast switching speed and a low on-state resistance, making it ideal for use in various industrial and general power control circuits.