X-On Electronics has gained recognition as a prominent supplier of XNM6N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. XNM6N60T IGBT Transistors are a product manufactured by XINER. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

XNM6N60T XINER

XNM6N60T electronic component of XINER
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See Product Specifications
Part No.XNM6N60T
Manufacturer: XINER
Category: IGBT Transistors
Description: IGBTs Field Stop 600V 6A TO-252 RoHS
Datasheet: XNM6N60T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6429 ea
Line Total: USD 0.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6429
10 : USD 0.5327
30 : USD 0.4775
100 : USD 0.4225
500 : USD 0.349
1000 : USD 0.3307

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Gate Threshold Voltage-Vgeth
Vceon Max @ Vge Ic
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We are delighted to provide the XNM6N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the XNM6N60T and other electronic components in the IGBT Transistors category and beyond.

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The XNM6N60T is an Insulated Gate Bipolar Transistor (IGBT) with Field Stop technology manufactured by XINER. It is a three-terminal semiconductor switching device with a maximum collector-emitter voltage of 600V and collector current of 6A. It is supplied in a TO-252 RoHS package and is typically used for high-frequency applications. The device has a dielectric strength of 2500Vrms, a forward voltage drop of 2.15V, and a maximum junction temperature of 150 degrees Celsius. The IGBT also has a power dissipation of 3.9W. It has a fast switching speed and a low on-state resistance, making it ideal for use in various industrial and general power control circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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