About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
L2N7002SLLT1G


SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Leshan Availability : 19397672
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USD 0.004
Multiples of: 100

                   
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 4629810
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USD 0.0161
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
DMN10H120SFG-13


Diodes Incorporated MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 3107880
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USD 0.2774
Multiples of: 3000

3.8 A100 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel20 V10.6 nCEnhancement  
SI1022R-T1-GE3


MOSFET 60V Vds 20V Vgs SC75A
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Vishay Availability : 2895450
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USD 0.1267
Multiples of: 3000

330 mA60 V2.25 OhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement Trenchfet
BSS84DWQ-7


Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
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Diodes Incorporated Availability : 2531700
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USD 0.1105
Multiples of: 3000

                   
2N7002NXAKR


MOSFET 60 V single N-channel Trench MOSFET
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Nexperia Availability : 1558858
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USD 0.0161
Multiples of: 1

300 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.33 nCEnhancement  
BSS138


MOSFET SOT-23 N-CH LOGIC
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ON Semiconductor Availability : 75660
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USD 0.0363
Multiples of: 3000

220 mA50 V3.5 OhmsN - Channel20 V - 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Reel    Enhancement  
BSS123,215


N-Channel 100 V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB
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Nexperia Availability : 38457
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USD 0.0299
Multiples of: 1

150 mA100 V6 OhmsN - Channel 1 V- 55 C150 C250 mW (1/4 w)SmdsmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
BSS84-7-F


50V 130mA 300mW 10O@5V,100mA P Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 34540
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USD 0.0204
Multiples of: 20

   P - Channel  - 55 C+ 150 C Smd/SmtSOT - 23Reel       
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) Availability : 135
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USD 0.0194
Multiples of: 20

340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
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