About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP21D0UFD-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 387030
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USD 0.0903
Multiples of: 3000

1.14 A20 V1.3 OhmsP - Channel 1.2 V- 55 C+ 150 C930 mWSmd/SmtX1 - DFN1212 - 3ReelSi1 Channel8 V1.5 nCEnhancement  
2N7002 TR


MOSFET N-Ch 60V .2A
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Central Semiconductor Availability : 386609
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USD 0.1042
Multiples of: 1

115 mA60 V3.7 OhmsN - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 23ReelSi1 Channel40 V592 pCEnhancement  
SQ2315ES-T1_BE3


MOSFET P-CHANNEL 12V D-S
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Vishay Availability : 376974
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USD 0.1898
Multiples of: 1

           Cut Tape       
BSS169H6327XTSA1


Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23
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Infineon Availability : 372480
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USD 0.0985
Multiples of: 3000

            Sipmos      
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated Availability : 370418
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USD 0.0425
Multiples of: 1

360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
NVTR01P02LT1G


ON Semiconductor MOSFET PFET 20V 0.160R TR
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ON Semiconductor Availability : 369570
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USD 0.0895
Multiples of: 1

- 1.3 A- 20 V220 mOhmsP - Channel     Smd/SmtSOT - 23 - 3ReelSi    Aec - Q101 
DMP2104LP-7


20V 1.5A 500mW 150mO@4.5V,900mA P Channel X1-DFN1411-3 MOSFETs ROHS
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Diodes Incorporated Availability : 368523
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USD 0.107
Multiples of: 1

1.5 A20 V150 mOhmsP - Channel 450 mV- 55 C+ 150 C500 mWSmd/SmtDFN1411 - 3Cut TapeSi1 Channel4.5 V Enhancement  
FDD8874


MOSFET 30V N-Channel PowerTrench
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ON Semiconductor Availability : 361313
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USD 0.5936
Multiples of: 1

116 A30 V5.1 mOhmsN - Channel  - 55 C+ 175 C110 WSmd/SmtTO - 252ReelSi1 Channel20 V Enhancement Powertrench
AO3400A


MOSFET N Trench 30V 5.7A 1.5V @ 250uA 26.5 mΩ @ 5.7A,10V SOT-23-3L RoHS
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Alpha & Omega Availability : 340645
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USD 0.0498
Multiples of: 5

                   
RSM002N06T2L


ROHM Semiconductor MOSFET Trans MOSFET N-CH 60V 0.25A
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ROHM Availability : 2406
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USD 0.0536
Multiples of: 5

250 mA60 V2.4 OhmsN - Channel 1 V- 55 C+ 150 C150 mWSmd/SmtVMT - 3ReelSi1 Channel10 V Enhancement  
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