About SiC MOSFETs

On Semiconductor SiC MOSFETs

SiC MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NTHL075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-3L
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USD 5.3851
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Through Hole N - Channel1 Channel650 V38 A85 mOhms- 8 V , + 22 V4.3 V61 nC- 55 C+ 175 C148 WEnhancement EliteSiC
NVH4L020N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 20 mohm, 900 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 417
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USD 79.1374
Multiples of: 1

               EliteSiC
NVH4L018N075SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 13.5mohm, 750V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 385
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USD 79.1377
Multiples of: 1

               EliteSiC
NTH4L025N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, TO247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 361
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USD 13.7592
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Through Hole N - Channel1 Channel650 V99 A28.5 mOhms- 8 V , + 22 V4.3 V164 nC- 55 C+ 175 C348 WEnhancement EliteSiC
NTH4L020N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 329
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USD 28.9296
Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV102 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C510 WEnhancement EliteSiC
NTH4L075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 321
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USD 5.7385
Multiples of: 1

Through Hole N - Channel1 Channel650 V38 A85 mOhms- 8 V , + 22 V4.3 V61 nC- 55 C+ 175 C148 WEnhancement EliteSiC
NTHL1000N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 293
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USD 2.53
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Through Hole N - Channel1 Channel1.7 kV 960 mOhms- 15 V , + 20 V4.3 V13.9 nC- 55 C+ 175 C Enhancement EliteSiC
NTH4L013N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 272
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USD 24.5874
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Through Hole N - Channel1 Channel1.2 kV151 A20 mOhms- 10 V , + 22 V4.4 V254 nC- 55 C+ 175 C682 WEnhancement EliteSiC
NTBG040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 248
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USD 5.718
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SMD/SMT N - Channel1 Channel1.2 kV51 A52 mOhms- 10 V , + 22 V4.4 V70 nC- 55 C+ 175 C329 WEnhancement EliteSiC
NVBG040N120M3S


SiC MOSFETs Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L SiC MOSFET 1200 V 40 mohm M3S Series in D2PAK-7LD package
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 232
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USD 22.8195
Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV49 A40.5 mOhms- 8 V , + 22 V3.22 V74.5 nC- 55 C+ 175 C297 WEnhancement EliteSiC
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