About SiC MOSFETs

Toshiba SiC MOSFETs

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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Voltage
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
TW048Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 48mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 82
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USD 9.8861

Multiples of: 1

Through Hole N - Channel1 Channel650 V40 A48 mOhms- 10 V , + 25 V5 V41 nC + 175 C132 WEnhancement  
TW015Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 15mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 52
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USD 54.8739

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV100 A15 mOhms- 10 V , + 25 V5 V158 nC + 175 C431 WEnhancement  
TW060Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 60mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 49
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USD 12.7008

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV36 A60 mOhms- 10 V , + 25 V5 V46 nC + 175 C170 WEnhancement  
TW083Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 46
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USD 7.8507

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A83 mOhms- 10 V , + 25 V5 V28 nC + 175 C111 WEnhancement  
TW083N65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247 83mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 43
Ship by Thu. 15 Aug to Mon. 19 Aug Calender.png

USD 8.9208

Multiples of: 1

Through Hole N - Channel1 Channel650 V20 A145 mOhms- 10 V , + 25 V5 V21 nC- 55 C+ 175 C76 WEnhancement  
TW045Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 45mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 39
Ship by Thu. 15 Aug to Mon. 19 Aug Calender.png

USD 15.6434

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV40 A45 mOhms- 10 V , + 25 V5 V57 nC + 175 C182 WEnhancement  
TW140Z120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247-4L 140mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 38
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USD 6.3387

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV20 A140 mOhms- 10 V , + 25 V5 V24 nC + 175 C107 WEnhancement  
TW107Z65C,S1F


SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 107mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 32
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USD 5.292

Multiples of: 1

Through Hole N - Channel1 Channel650 V20 A107 mOhms- 10 V , + 25 V5 V21 nC + 175 C76 WEnhancement  
TW030N120C,S1F


SiC MOSFETs G3 1200V SiC-MOSFET TO-247 30mohm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba Availability : 0
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USD 26.726

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV 40 mOhms- 10 V , + 25 V5 V82 nC- 55 C+ 175 C249 WEnhancement  
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