Solderable Planar Photodiode SLSD-71N800 Advanced Photonix, Inc. Directional Sensitivity Characteristics 40 30 20 10 1.0 0.8 150 nom 50 0.8 Half Angle = 60 4.8 3.4 0.6 Nom. +Red 60 (Anode) 0.4 1.3 70 -Blk 0.2 32 AWG Wire 80 (Cathode) 0.0 90 Sensitive Area (2.7 sq. mm.) 100 Dimensions in mm. 1.0 0.8 0.6 0.4 20 40 60 80 100 120 FEATURES DESCRIPTION APPLICATIONS Lead-Free These Silicon solderable planar photodiodes feature low cost, high reliability, Industrial Visible to IR spectral irradiance and linear short circuit current over a wide range of illumination. These de- range vices are widely used for light sensing and power generation because of their High reliability stability and high efficiency. They are particularly suited to power conver- Oxide passivation sion applications due to their low internal impedance, relatively high shunt Linear short circuit current impedance, and stability. These devices also provide a reliable and inexpen- Low capacitance, high speed sive detector for instrumentation and light beam sensing applications. In the Available in arrays where indi- multi-element arrays the cathodes are common to a single cathode wire. cates number of elements ( maximum of 8 elements ) ABSOLUTE MAXIMUM RATING (TA)= 23C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Notes: Operating Temperature -40 +105 C T Op (1) Ee = light source 2854 K, T Storage Temperature -40 +105 C Stg (2) Available without leads as part number SLCD-61N800 or T Soldering Temperature* +260 C S as chip array as SLCD-61N800-XX RELIABILITY Contact API for recommendations on specific test conditions and procedures. (TA)= 23C, UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ISC Short Circuit Current VR=0V, Ee=25mW/cm2 (1) 100 170 - A VOC Open Circuit Voltage Ee=25mW/cm2 (1) 0.4 - V ID Reverse Dark Current: VR=5V, Ee=0 1.7 A VBR Reverse Breakdown Voltage IR=100A 20 V P Maximum Sensitivity Wavelength 930 nm S Spectral Sensitivity =940nm 0.55 A/W R Sensitivity Spectral Range 400 1100 nm Cj Junction Capacitance VR=0V, Ee=0, f=1MHz - 100 pF 1/2 Acceptance Half Angle (off center-line) - 60 deg Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. 2012 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 Phone (805) 987-0146 Fax (805) 484-9935 www.advancedphotonix.com REV 03/27-15 X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Advanced Photonix manufacturer: Other Similar products are found below : NSL-32SR3 SLCD-61N5 NSL 4962 SLD-70 BG2A NSL 06S53 NORPS-12 NSL 19M51