BLF6G15L-500H,112 Ampleon

BLF6G15L-500H BLF6G15LS-500H Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 65 W average DVB-T at 1.5 GHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at V = 50 V I = 1.3 A. DS Dq Mode of operation f P G IMD3 IMD PAR L(AV) p D shldr (MHz) (W) (dB) (%) (dBc) (dBc) (dB) 2-tone, class-AB 1452 to 1492 250 15 34 24 - - 1 2 DVB-T (8k OFDM) 1452 to 1492 65 16 19 - 32 9 1 Measured dBc with delta marker at 4.3 MHz from center frequency. 2 PAR (of output signal) at 0.01 % probability on CCDF PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Digital transmitter applications DVB at 1.5 GHz Industrial applications at 1.5 GHzBLF6G15L-500H BLF6G15LS-500H NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G15L-500H (SOT539A) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 BLF6G15LS-500H (SOT539B) 1drain1 12 1 2drain2 5 3gate1 3 3 4 4gate2 5 4 1 5source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G15L-500H - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads BLF6G15LS-500H - earless flanged balanced LDMOST ceramic SOT539B package 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 100 V DS V gate-source voltage 0.5 +13 V GS I drain current - 45 A D T storage temperature 65 +150 C stg T junction temperature - 200 C j BLF6G15L-500H 6G15LS-500H All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved. Product data sheet Rev. 3 12 July 2013 2 of 13