X-On Electronics has gained recognition as a prominent supplier of BLF6G21-10G112 across the USA, India, Europe, Australia, and various other global locations. BLF6G21-10G112 are a product manufactured by Ampleon. We provide cost-effective solutions for BLF6G21-10G112, ensuring timely deliveries around the world.

BLF6G21-10G112 Ampleon

BLF6G21-10G112 electronic component of Ampleon
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Part No.BLF6G21-10G112
Manufacturer: Ampleon
Category: Unclassified
Description: RF Components
A 10GHz, 6 watts, GaN on SiC, Envelope Tracking-capable RF Power Amplifier.
Datasheet: BLF6G21-10G112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
160: USD 35.8009 ea
Line Total: USD 5728.14 
Availability - 0
MOQ: 160  Multiples: 160
Pack Size: 160
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 160
Multiples : 160
160 : USD 35.8009

   
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We are delighted to provide the BLF6G21-10G112 from our Ampleon manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF6G21-10G112 and other electronic components in the Ampleon manufacturer and beyond.

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The BLF6G21-10G112 from Ampleon is an internally matched single-pole 10-GHz GaN RF power transistor designed for tactical and telecom applications. It operates from 8 to 10 GHz and is designed for high power and high gain performance. Output power of up to 112 W (with 10.5 dB of gain), and efficiency of up to 38% can be obtained with this device. It features a self-protection process with integrated overvoltage, overloaded and over-temperature detection. The transistor is housed in a ceramic surface mount package and operates from a single 50 V supply.

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