X-On Electronics has gained recognition as a prominent supplier of BLF884P112 across the USA, India, Europe, Australia, and various other global locations. BLF884P112 are a product manufactured by Ampleon. We provide cost-effective solutions for BLF884P112, ensuring timely deliveries around the world.

BLF884P112 Ampleon

BLF884P112 electronic component of Ampleon
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See Product Specifications
Part No.BLF884P112
Manufacturer: Ampleon
Category: Unclassified
Description: RF Components
High-power 2-stage LDMOS power amplifier, offering power up to 112W.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
60: USD 183.4826 ea
Line Total: USD 11008.96 
Availability - 0
MOQ: 60  Multiples: 60
Pack Size: 60
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 60
Multiples : 60
60 : USD 183.4826

   
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We are delighted to provide the BLF884P112 from our Ampleon manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF884P112 and other electronic components in the Ampleon manufacturer and beyond.

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The BLF884P112 part produced by Ampleon is a transistor designed to be used in high gain linear cellular RF amplifiers. It has an output power of 12 W max. The BLF884P112 operates between 70 MHz and 4 GHz, with a 24 V supply voltage, a 150 W P1dB and gain of 10.4 dB at 2.1494 GHz. The transistor offers excellent linearity and gain flatness, as well as high gain and low conductivity. The BLF884P112 is also designed to provide superior thermal stability, making it ideal for high-efficiency, high linearity base station applications.

Tariff Desc

8541290075
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