X-On Electronics has gained recognition as a prominent supplier of ADL5324ARKZ-R7 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. ADL5324ARKZ-R7 RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

ADL5324ARKZ-R7 Analog Devices

ADL5324ARKZ-R7 electronic component of Analog Devices
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Part No.ADL5324ARKZ-R7
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier Sot-89 1/2 W RF Driver Amplifier
Datasheet: ADL5324ARKZ-R7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 7.1225 ea
Line Total: USD 7122.5 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 12.6599
10 : USD 11.1427
25 : USD 10.13
100 : USD 9.1169
250 : USD 8.3571
500 : USD 7.5974

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 12.6599
10 : USD 11.1427
25 : USD 10.13
100 : USD 9.1169
250 : USD 8.3571
500 : USD 7.5974

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 7.1225

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 8.3144
10 : USD 7.2899
25 : USD 7.0794
100 : USD 6.217
250 : USD 6.0365
500 : USD 5.5652

   
Manufacturer
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RoHS - XON
Icon ROHS
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Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
Factory Pack Quantity :
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We are delighted to provide the ADL5324ARKZ-R7 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ADL5324ARKZ-R7 and other electronic components in the RF Amplifier category and beyond.

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400 MHz to 4000 MHz Watt RF Driver Amplifier Data Sheet ADL5324 FEATURES FUNCTIONAL BLOCK DIAGRAM GND Operation from 400 MHz to 4000 MHz (2) Gain of 14.6 dB at 2140 MHz ADL5324 OIP3 of 43.1 dBm at 2140 MHz P1dB of 29.1 dBm at 2140 MHz Noise figure of 3.8 dB BIAS 1 2 3 Dynamically adjustable bias RFIN GND RFOUT Adjustable power supply bias: 3.3 V to 5 V Figure 1. Low power supply current: 62 mA to 133 mA No bias resistor needed Operating temperature range of 40C to +105C SOT-89 package, MSL-1 rated ESD rating of 3 kV (Class 2) APPLICATIONS Wireless infrastructure Automated test equipment ISM/AMR applications GENERAL DESCRIPTION The ADL5324 incorporates a dynamically adjustable biasing The ADL5324 also delivers excellent ACPR vs. output power and circuit that allows for the customization of OIP3 and P1dB bias voltage. The driver can deliver greater than 17 dBm of output performance from 3.3 V to 5 V, without the need for an external power at 2140 MHz, while achieving an ACPR of 55 dBc at 5 V. If bias resistor. This feature gives the designer the ability to tailor the bias is reduced to 3.3 V, the 55 dBc ACPR output power driver amplifier performance to the specific needs of the design. only minimally reduces to 15 dBm. This feature also creates the opportunity for dynamic biasing of 30 the driver amplifier where a variable supply is used to allow for 35 full 5 V biasing under large signal conditions, and then reduced 40 supply voltage when signal levels are smaller and lower power 45 consumption is desirable. This scalability reduces the need to 50 evaluate and inventory multiple driver amplifiers for different 55 output power requirements, from 25 dBm to 29 dBm output SOURCE 60 V = 3.3V power levels. CC V = 5V 65 CC The ADL5324 is also rated to operate across the wide temperature 70 range of 40C to +105C for reliable performance in designs 75 that experience higher temperatures, such as power amplifiers. 80 The W driver amplifier also covers the wide frequency range 85 of 400 MHz to 4000 MHz, and only requires a few external 20 15 10 5 0 5 10 15 20 25 P (dBm) components to be tuned to a specific band within that wide range. OUT This high performance broadband RF driver amplifier is well Figure 2. ACPR vs. Output Power, Single Carrier W-CDMA, TM1-64 at 2140 MHz suited for a variety of wired and wireless applications, including cellular infrastructure, ISM band power amplifiers, defense equipment, and instrumentation equipment. A fully populated evaluation board is available. Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 020629106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Fax: 781.461.3113 2012 Analog Devices, Inc. All rights reserved. ACPR 5MHz CARRIER OFFSET (dBc) 10562-001 10562055ADL5324 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................8 Applications ....................................................................................... 1 High Temperature Operation ................................................... 12 Functional Block Diagram .............................................................. 1 Applications Information .............................................................. 13 General Description ......................................................................... 1 Basic Layout Connections ......................................................... 13 Revision History ............................................................................... 2 Soldering Information and Recommended PCB Land Pattern. 13 Specifications ..................................................................................... 3 Matching Procedure ................................................................... 15 Typical Scattering Parameters ..................................................... 5 W-CDMA ACPR Performance ................................................ 16 Absolute Maximum Ratings ............................................................ 6 Evaluation Board ............................................................................ 17 Thermal Resistance ...................................................................... 6 Outline Dimensions ....................................................................... 20 ESD Caution .................................................................................. 6 Ordering Guide .......................................................................... 20 Pin Configuration and Function Descriptions ............................. 7 REVISION HISTORY 9/12Rev. A to Rev. B 8/12Rev. 0 to Rev. A Changes to Figure 27 ...................................................................... 11 Change 5 V Supply Current from 140 mA to 133 mA and 5 V Changed Figure 30 Tex t Reference to Figure 33 Text Reference ... 12 Power Dissipation from 700 mW to 665 mW, Table 1 ................. 4 Changed Table 7 Text Reference to Table 6 ................................. 15 Changes to Supply Current from 140 mA to 133 mA ............... 13 Changed Table 9 Text Reference to Table 10 and Table 10 Text 3/12Revision 0: Initial Version Reference to Table 11 ..................................................................... 17 Changes to Figure 44 ...................................................................... 18 Rev. B Page 2 of 20

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