Isolated, Precision Gate Drivers with 2 A Output Data Sheet ADuM4120/ADuM4120-1 FEATURES GENERAL DESCRIPTION 1 2.3 A peak output current (<2 R ) The ADuM4120/ADuM4120-1 are 2 A isolated, single-channel DSON x 2.5 V to 6.5 V V input DD1 drivers that employ Analog Devices, Inc., iCoupler technology 4.5V to 35 V V output DD2 to provide precision isolation. The ADuM4120/ADuM4120-1 UVLO at 2.3 V V DD1 provide 5 kV rms isolation in the 6-lead wide body SOIC package Multiple UVLO options on V DD2 with increased creepage. Combining high speed CMOS and Grade A4.4 V (typical) positive going threshold monolithic transformer technology, these isolation components Grade B7.3 V (typical) positive going threshold provide outstanding performance characteristics, such as the Grade C11.3 V (typical) positive going threshold combination of pulse transformers and gate drivers. Precise timing characteristics The ADuM4120/ADuM4120-1 operate with input supplies 79 ns maximum isolator and driver propagation delay ranging from 2.5 V to 6.5 V, providing compatibility with lower falling edge (ADuM4120) voltage systems. In comparison to gate drivers employing CMOS input logic levels high voltage level translation methodologies, the ADuM4120/ High common-mode transient immunity: 150 kV/s ADuM4120-1 offer the benefit of true, galvanic isolation between High junction temperature operation: 125C the input and the output. Default low output Options exist for models with and without an input glitch filter. Safety and regulatory approvals (pending) The glitch filter helps reduce the chance of noise on the input pin UL recognition per UL 1577 triggering an output. 5 kV rms for 1 minute SOIC long package CSA Component Acceptance Notice 5A As a result, the ADuM4120/ADuM4120-1 provide reliable VDE certificate of conformity (pending) control over the switching characteristics of insulated gate DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 bipolar transistor (IGBT)/metal-oxide semiconductor field effect V = 849 V peak IORM transistor (MOSFET) configurations over a wide range of 8 mm creepage switching voltages. Wide body, 6-lead SOIC with increased creepage APPLICATIONS Switching power supplies IGBT/MOSFET gate drivers Industrial inverters Gallium nitride (GaN)/silicon carbide (SiC) power devices FUNCTIONAL BLOCK DIAGRAM ADuM4120/ 1 6 V V DD1 DD2 ADuM4120-1 DECODE 2 ENCODE AND 5 V V IN OUT LOGIC UVLO UVLO TSD 4 3 GND GND 2 1 Figure 1. 1 Protected by U.S. Patents 5,952,849 6,873,065 7,075,239. Other patents pending. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 2017 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. 15493-001ADuM4120/ADuM4120-1 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions ..............................8 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................9 General Description ......................................................................... 1 Theory of Operation ...................................................................... 12 Functional Block Diagram .............................................................. 1 Applications Information .............................................................. 13 Revision History ............................................................................... 2 PCB Layout ................................................................................. 13 Specif icat ions ..................................................................................... 3 Propagation Delay Related Parameters ................................... 13 Electrical Characteristics ............................................................. 3 Thermal Limitations and Switch Load Characteristics ......... 13 Regulatory Information ............................................................... 4 Undervoltage Lockout (UVLO) ............................................... 13 Package Characteristics ............................................................... 5 Output Load Characteristics ..................................................... 14 Insulation and Safety Related Specifications ............................ 5 Power Dissipation....................................................................... 14 DIN V VDE V 0884-10 (VDE V 0884-10) Insulation DC Correctness and Magnetic Field Immunity ........................... 14 Characteristics .............................................................................. 5 Insulation Lifetime ..................................................................... 15 Recommended Operating Conditions ...................................... 6 Outline Dimensions ....................................................................... 17 Absolute Maximum Ratings ............................................................ 7 Ordering Guide .......................................................................... 17 ESD Caution .................................................................................. 7 REVISION HISTORY 5/2017Revision 0: Initial Version Rev. 0 Page 2 of 17