X-On Electronics has gained recognition as a prominent supplier of HMC415LP3ETR RF Amplifier across the USA, India, Europe, Australia, and various other global locations. HMC415LP3ETR RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

HMC415LP3ETR Analog Devices

HMC415LP3ETR electronic component of Analog Devices
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Part No.HMC415LP3ETR
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier InGaP HBT pow amp SMT, 4.9 - 5.9 GHz
Datasheet: HMC415LP3ETR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.5762 ea
Line Total: USD 12.58 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 21.7602
10 : USD 20.3364
25 : USD 18.9606
100 : USD 16.9857
250 : USD 16.3316
500 : USD 15.5319
1000 : USD 15.1564

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Product
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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We are delighted to provide the HMC415LP3ETR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HMC415LP3ETR and other electronic components in the RF Amplifier category and beyond.

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HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Typical Applications Features This ampl ifier is ideal for use as a power Gain: 20 dB ampl ifier for 4.9 - 5.9 GHz applications: 34% PAE Psat = +26 dBm 802.11a WLAN 3.7% EVM Pout = +15 dBm HiperLAN WLAN with 54 Mbps OFDM Signal Access Points Supply Voltage: +3V UNII & ISM Radios Power Down Capability 11 Low External Part Count General Description Functional Diagram The HMC415LP3 & HMC415LP3E are high effi- ciency GaAs InGaP Heterojunction Bipolar Tran- sistor (HBT) MMIC Power ampl ifiers which operate between 4.9 and 5.9 GHz. The ampl ifier is pack- aged in a low cost, leadless surface mount pack- age with an exposed base for improved RF and thermal performance. With a minimum of external components, the ampl ifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3 & HMC415LP3E achieve an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements. Electrical Specifi cations, T = +25 C, Vs = 3V, Vpd = 3V A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 4.9 - 5.1 5.1 - 5.4 5.4 - 5.9 GHz Gain 18 20 18.5 20.5 16 19 dB Gain Variation Over Temperature 0.04 0.05 0.04 0.05 0.04 0.05 dB / C Input Return Loss 10 9 8 dB Output Return Loss 10 12 8 dB Output Power for 1dB Icq = 285 mA 20 22.5 20.5 23.0 18 21.5 dBm Compression (P1dB) Icq = 200 mA 22.0 22.5 21.0 Saturated Output Power (Psat) 25.5 26 24 dBm Output Third Order Intercept (IP3) 28 31 29 32 27 30 dBm Error Vector Magnitude Icq = 200 mA 3.7 % (54 Mbps OFDM Signal +15 dBm Pout) Noise Figure 6 6 6 dB 0.002 / 0.002 / 0.002 / Supply Current (Icq) Vpd = 0V/3V mA 285 285 285 Control Current (Ipd) Vpd = 3V 7 7 7 mA Switching Speed tOn, tOff 45 45 45 ns Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 66 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMTHMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz Broadband Gain & Return Loss Gain vs. Temperature 25 24 22 20 20 15 18 10 S21 16 S11 5 S22 14 0 12 10 -5 +25 C 8 +85 C -10 11 -40 C 6 -15 4 -20 2 -25 0 4.8 5 5.2 5.4 5.6 5.8 6 34 56 78 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 +25 C -5 -5 +85 C -40 C -10 -10 +25 C -15 -15 +85 C -40 C -20 -20 4.8 5 5.2 5.4 5.6 5.8 6 4.8 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 28 28 26 26 24 24 22 22 20 20 +25 C 18 18 +85 C +25 C -40 C 16 +85 C 16 -40 C 14 14 12 12 10 10 4.8 5 5.2 5.4 5.6 5.8 6 4.8 5 5.2 5.4 5.6 5.8 6 FREQUENCY (GHz) FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 67 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com P1dB (dBm) RESPONSE (dB) RETURN LOSS (dB) Psat (dBm) RETURN LOSS (dB) GAIN (dB) LINEAR & POWER AMPLIFIERS - SMT

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ANALOG DEVICES
Analog Devices Hittite
ANALOG DEVICES (LINEAR TECHNOLOGY)
ANALOG DEVICES (MAXIM INTEGRATED)
ANALOG DEVICES (TRINAMIC)
Analog Devices / Hittite
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Analog Devices Inc.
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DA4
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HANSCHIP semiconductor
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LINEAR TECH
Linear Technology
Linear Technology (part of ADI)
LT
LT4
MAXIM
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MAXIM INTEGRATED / ANALOG DEVICES
Maxim Integrated Products
MAXIM-DALLAS
MX4
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Trinamic
TRINAMIC / ANALOG DEVICES
Trinamic Motion Control
Trinamic Motion Control GmbH
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