X-On Electronics has gained recognition as a prominent supplier of HMC452QS16GE RF Amplifier across the USA, India, Europe, Australia, and various other global locations. HMC452QS16GE RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

HMC452QS16GE Analog Devices

HMC452QS16GE electronic component of Analog Devices
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Part No.HMC452QS16GE
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier IC General Purpose 400MHz ~ 2.2GHz 16-QSOP-EP
Datasheet: HMC452QS16GE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
56: USD 16.2466 ea
Line Total: USD 909.81 
Availability - 0
MOQ: 56  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 10 Oct to Wed. 16 Oct
MOQ : 1
Multiples : 1
1 : USD 26.8
10 : USD 23.2789
25 : USD 21.4413
100 : USD 19.6034
250 : USD 18.378
500 : USD 17.1529

0
Ship by Wed. 16 Oct to Fri. 18 Oct
MOQ : 1
Multiples : 1
1 : USD 24.321
10 : USD 22.7398
25 : USD 21.208
100 : USD 18.992
250 : USD 18.2575
500 : USD 17.3685
1000 : USD 16.9433

   
Manufacturer
Product Category
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Brand
Number Of Channels
Input Return Loss
Rohs Mouser
Product
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HMC452QS16GE from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HMC452QS16GE and other electronic components in the RF Amplifier category and beyond.

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HMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Typical Applications Features The HMC452QS16G / HMC452QS16GE is ideal for Output IP3: +48 dBm applications requiring a high dynamic range ampl ifier: 22.5 dB Gain 400 MHz GSM, GPRS & EDGE 9 dB Gain 2100 MHz CDMA & W-CDMA 53% PAE +31 dBm Pout CATV/Cable Modem +24 dBm CDMA2000 Channel Power -45 dBc ACP Fixed Wireless & WLL 11 Single +5V Supply Integrated Power Control (VPD) 2 QSOP16G SMT Package: 29.4 mm General Description Functional Diagram The HMC452QS16G & HMC452QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power ampl ifiers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amp- l ifier gain is typically 22.5 dB at 0.4 GHz and 9 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the ampl ifier output IP3 can be optimized to +43 dBm at 0.4 GHz or +48 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC452QS16G(E)ideal power ampl ifiers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. 1 Electrical Specifi cations, T = +25C, Vs= +5V, VPD = +5V A Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units Frequency Range 400 - 410 450 - 496 810 - 960 1710 - 1990 2010 - 2170 MHz Gain 20 22.5 19 21.5 13 15.5 7.5 10 6.5 9 dB Gain Variation Over 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 0.012 0.02 dB/C Temperature Input Return Loss 13 15 9 17 11 dB Output Return Loss 7 8 12 15 20 dB Output Power for 1dB 27.5 30.5 27.5 30.5 27 30 28 31 28 31 dBm Compression (P1dB) Saturated Output 31 31 31 31.5 32.5 dBm Power (Psat) Output Third Order 40 43 41 44 45 48 45 48 45 48 dBm 2 Intercept (IP3) Noise Figure 7 7 7 7 7.5 dB Supply Current (Icq) 485 485 485 485 485 mA Control Current (IPD) 10 10 10 10 10 mA 1 Speci fications and data re flect HMC452QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. 2 Two-tone input power of -10 dBm per tone, 1 MHz spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 134 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMTHMC452QS16G / 452QS16GE v01.0205 InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz Broadband Gain Gain vs. Temperature 400 MHz & Return Loss 400 MHz 25 25 24 20 23 22 15 21 10 S21 20 S11 19 5 S22 +25 C 18 +85 C 17 0 -40 C 16 11 -5 15 14 -10 13 -15 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss Output Return Loss vs. Temperature 400 MHz vs. Temperature 400 MHz 0 0 -2 -2 -4 +25 C -4 +85 C -6 -6 -40 C -8 -8 -10 -10 -12 -12 +25 C +85 C -14 -14 -40 C -16 -16 0.35 0.37 0.39 0.41 0.43 0.45 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) P1dB vs. Temperature 400 MHz Psat vs. Temperature 400 MHz 34 34 33 33 32 32 31 31 30 30 29 29 +25 C +25 C 28 28 +85 C +85 C -40 C -40 C 27 27 26 26 25 25 24 24 0.35 0.37 0.39 0.41 0.43 0.45 0.35 0.37 0.39 0.41 0.43 0.45 FREQUENCY (GHz) FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 135 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com P1dB (dBm) RETURN LOSS (dB) RESPONSE (dB) Psat (dBm) RETURN LOSS (dB) GAIN (dB) LINEAR & POWER AMPLIFIERS - SMT

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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