X-On Electronics has gained recognition as a prominent supplier of HMC457QS16GETR RF Amplifier across the USA, India, Europe, Australia, and various other global locations. HMC457QS16GETR RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

HMC457QS16GETR Analog Devices

HMC457QS16GETR electronic component of Analog Devices
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Part No.HMC457QS16GETR
Manufacturer: Analog Devices
Category: RF Amplifier
Description: RF Amplifier IC General Purpose 1.7GHz ~ 2.2GHz 16-QSOPG
Datasheet: HMC457QS16GETR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 20.4302 ea
Line Total: USD 20.43 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 10 Oct to Wed. 16 Oct
MOQ : 1
Multiples : 1
1 : USD 46.4236
10 : USD 41.3285
25 : USD 37.8851
100 : USD 35.0146
250 : USD 34.4405

0
Ship by Thu. 10 Oct to Wed. 16 Oct
MOQ : 1
Multiples : 1
1 : USD 46.4236
10 : USD 41.3285
25 : USD 37.8851
100 : USD 35.0146
250 : USD 34.4405

0
Ship by Thu. 10 Oct to Wed. 16 Oct
MOQ : 500
Multiples : 500
500 : USD 35.7161

0
Ship by Wed. 16 Oct to Fri. 18 Oct
MOQ : 500
Multiples : 500
500 : USD 19.894

   
Manufacturer
Product Category
Package / Case
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Operating Supply Current
Packaging
Series
Test Frequency
Part Status
Rf Type
Mounting Type
Supplier Device Package
Base Part Number
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We are delighted to provide the HMC457QS16GETR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HMC457QS16GETR and other electronic components in the RF Amplifier category and beyond.

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HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for Output IP3: +46 dBm applications requiring a high dynamic range ampl ifier: Gain: 27 dB 1900 MHz CDMA & W-CDMA 48% PAE +32 dBm Pout GSM, GPRS & Edge +25 dBm W-CDMA Channel Power Base Stations & Repeaters -50 dBc ACPR Integrated Power Control (Vpd) 11 2 QSOP16G SMT Package: 29.4 mm Included in the HMC-DK002 Designers Kit Functional Diagram General Description The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power ampl ifiers operating between 1.7 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the ampl er ifi gain is typically 27 dB from 1.7 to 2.0 GHz and 25 dB from 2.0 to 2.2 GHz. Utilizing a minimum number of external components, the ampl ifier output IP3 can be optimized to +45 dBm. The power control (Vpd) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC457QS16G & HMC457QS16GE ideal power ampl ifiers for Cellular/3G base station & repeater applications. 1 Electrical Specifi cations, T = +25C, Vs= +5V, Vpd = +5V, Vbias = +5V A Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 1710 - 1990 2010 - 2170 MHz Gain 24 27 22 25 dB Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB / C Input Return Loss 11 11 dB Output Return Loss 8 5 dB Output Power for 1dB Compression (P1dB) 26 29 27.5 30.5 dBm Saturated Output Power (Psat) 32.5 32 dBm 2 Output Third Order Intercept (IP3) 42 45 42 45 dBm Noise Figure 6 5 dB Supply Current (Icq) 500 500 mA Control Current (Ipd) 4 4 mA Bias Current (Vbias) 10 10 mA 1 Speci fications and data re flect HMC457QS16G measured using the respective application circuits for each designated frequency band found herein. Contact the HMC Applications Group for assistance in optimizing performance for your application. 2 Two-tone output power of +15 dBm per tone, 1 MHz spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 240 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com LINEAR & POWER AMPLIFIERS - SMTHMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Broadband Gain Gain vs. Temperature 1900 MHz & Return Loss 1900 MHz 30 30 25 28 20 26 15 24 10 22 S21 S11 5 S22 20 0 18 +25C +85C -5 16 -40C 11 -10 14 -15 12 -20 10 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) Input Return Loss Output Return Loss vs. Temperature 1900 MHz vs. Temperature 1900 MHz 0 0 -2 +25C -4 -3 +85C -40C -6 -8 -6 -10 -12 -9 -14 +25C -16 -12 +85C -40C -18 -20 -15 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) PldB vs. Temperature 1900 MHz Psat vs. Temperature 1900 MHz 34 34 32 32 30 30 28 28 26 26 +25 C +85 C -40 C 24 24 +25 C +85 C -40 C 22 22 20 20 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 1.6 1.65 1.7 1.75 1.8 1.85 1.9 1.95 2 2.05 2.1 FREQUENCY (GHz) FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 11 - 241 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com P1dB (dBm) RETURN LOSS (dB) RESPONSE (dB) Psat (dBm) RETURN LOSS (dB) GAIN (dB) LINEAR & POWER AMPLIFIERS - SMT

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ANALOG DEVICES
Analog Devices Hittite
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Analog Devices Inc.
Analog Devices Inc./Maxim Integrated
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DA4
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LT4
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MAXIM-DALLAS
MX4
Technology
Trinamic
TRINAMIC / ANALOG DEVICES
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Trinamic Motion Control GmbH

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