X-On Electronics has gained recognition as a prominent supplier of HMC618ALP3E RF Amplifier across the USA, India, Europe, Australia, and various other global locations. HMC618ALP3E RF Amplifier are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

HMC618ALP3E Analog Devices

HMC618ALP3E electronic component of Analog Devices
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Part No.HMC618ALP3E
Manufacturer: Analog Devices
Category: RF Amplifier
Description: Analog Devices RF Amplifier Low Noise Amplifier LNA
Datasheet: HMC618ALP3E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.8238 ea
Line Total: USD 12.82 
Availability - 1
Ship by Fri. 06 Sep to Wed. 11 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 30 Aug to Thu. 05 Sep
MOQ : 1
Multiples : 1
1 : USD 17.0375
10 : USD 14.7996
25 : USD 13.632
100 : USD 12.4637
250 : USD 11.6847
500 : USD 10.9057
1000 : USD 10.3603

0
Ship by Fri. 06 Sep to Wed. 11 Sep
MOQ : 1
Multiples : 1
1 : USD 12.6471
10 : USD 12.4729
30 : USD 12.1717
100 : USD 11.9088

0
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 1
Multiples : 1
1 : USD 16.0515
10 : USD 14.456
25 : USD 14.014
100 : USD 12.075
250 : USD 11.6125
500 : USD 11.0375
1000 : USD 10.7625

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Amplifier Type
Brand
Number Of Channels
Input Return Loss
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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We are delighted to provide the HMC618ALP3E from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HMC618ALP3E and other electronic components in the RF Amplifier category and beyond.

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HMC618ALP3E v01.0519 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Features Typical Applications The HMC618ALP3E is ideal for: Noise Figure: 0.75 dB Cellular/3G and LTE/WiMAX/4G Gain: 19 dB OIP3: 36 dBm BTS & Infrastructure Single Supply: +3V to +5V Repeaters and Femto Cells 50 Ohm Matched Input/Output Public Safety Radios 2 16 Lead 3x3mm SMT Package: 9 mm Functional Diagram General Description The HMC618ALP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618ALP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618ALP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). Electrical Specifications T = +25 C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V A Vdd = 5 Vdc Parameter Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range 1200 - 1700 1700 - 2000 2000 - 2200 MHz Gain 19 23 16 19 13.5 17 dB Gain Variation Over Temperature 0.012 0.008 0.008 dB/C Noise Figure 0.65 0.85 0.75 1.1 0.85 1.15 dB Input Return Loss 22.5 18 19.5 dB Output Return Loss 13 12.5 10 dB Output Power for 1 dB 19 16.5 20 18 20 dBm Compression (P1dB) Saturated Output Power (Psat) 20.5 20.5 20.5 dBm Output Third Order Intercept (IP3) 29.4 33.5 29.5 35 30.4 35.5 dBm Supply Current (Idd) 89 118 89 118 89 118 mA * Rbias resistor sets current, see application circuit herein Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 Order online at www.analog.com 1 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D AMPLIFIERS - LOW NOISE - SMTHMC618ALP3E v01.0519 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 1.2 - 2.2 GHz Electrical Specifications T = +25 C, Rbias = 10K Ohm for Vdd1 = Vdd2 = 3V A Vdd = 3 Vdc Parameter Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range 1200 - 1700 1700 - 2000 2000 - 2200 MHz Gain 18 22 15 18 12.5 15.8 dB Gain Variation Over Temperature 0.009 0.009 0.009 dB/C Noise Figure 0.8 1.1 0.9 1.2 0.9 1.2 dB Input Return Loss 26 17 19 dB Output Return Loss 14 13 11 dB Output Power for 1 dB 10 15 12 15 13 15 dBm Compression (P1dB) Saturated Output Power (Psat) 16 16 16 dBm Output Third Order Intercept (IP3) 28 28 28 dBm Supply Current (Idd) 47 65 47 65 47 65 mA * Rbias resistor sets current, see application circuit herein 1700 to 2200 MHz Tune 1 2 1 Broadband Gain & Return Loss Gain vs. Temperature 26 24 S21 22 16 20 6 18 S22 -4 16 S11 -14 14 -24 12 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) Vdd=5V Vdd=3V +25 C +85 C - 40 C 1 2 Gain vs. Temperature Input Return Loss vs. Temperature 22 0 20 -5 18 -10 16 -15 14 -20 12 10 -25 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) +25 C +85 C - 40 C +25 C +85 C - 40 C 1 Vdd = 5V, Rbias = 470 Ohm 2 Vdd = 3V, Rbias = 10K Ohm For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D GAIN (dB) RESPONSE (dB) RETURN LOSS (dB) GAIN (dB) AMPLIFIERS - LOW NOISE - SMT

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Analog Devices Hittite
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