HMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Features T ypical Applications The HMC667LP2(E) is ideal for: Low Noise Figure: 0.75 dB WiMAX, WiBro & Fixed Wireless High Gain: 19 dB SDARS & WLAN Receivers High Output IP3: +29.5 dBm Infrastructure & Repeaters Single Supply: +3V to +5V Access Points 2 6 Lead 2x2mm DFN Package: 4 mm Telematics & DMB Fu nctional Diagram General Description The HMC667LP2(E) is a GaAs PHEMT MMIC Low Noise Ampl ifier that is ideal for WiMAX, WLAN and fixed wireless receivers operating between 2300 and 2700 MHz. This self-biased LNA has been optimized to provide 0.75 dB noise fi gure, 19 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC667LP2(E) can also operate from a +3V supply for lower power applications. E lectrical Specifi cations, T = +25 C A Vdd = +3 Vdc Vdd = +5 Vdc Parameter Units Min. Typ. Max. Min. Typ. Max. Frequency Range 2300 - 2700 2300 - 2700 MHz Gain 14 17.5 16 19 dB Gain Variation Over Temperature 0.01 0.01 dB/ C Noise Figure 0.9 1.2 0.75 1.1 dB Input Return Loss 10 12 dB Output Return Loss 15 14 dB Output Power for 1 dB 9.5 11.5 13.5 16.5 dBm Compression (P1dB) Saturated Output Power (Psat) 12.5 17 dBm Output Third Order Intercept (IP3) 22 29.5 dBm Supply Current (Idd) 24 32 59 75 mA For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE AMPLIFIERS - LOW NOISE - SMTHMC667LP2 / 667LP2E v02.1110 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.3 - 2.7 GHz 7 Broadband Gain & Retur n Loss Gain vs. Temperature 25 24 20 Vdd=5V S21 22 15 10 20 5 S11 0 18 -5 16 -10 Vdd=3V +25C -15 14 Vdd=5V S22 +85C Vdd=3V -40C -20 -25 12 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 I nput Return Loss vs. Temperature O utput Return Loss vs. Temperature 0 0 +25C +25C -5 -5 +85C +85C -40C -40C -10 -10 -15 -15 -20 -20 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) 1 R everse Isolation vs. Temperature P1dB vs. Temperature 20 -20 Vdd=5V 18 -25 16 -30 14 Vdd=3V -35 12 +25C -40 +85C 10 -40C +25C -45 8 +85C -40C 6 -50 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE ISOLATION (dB) RETURN LOSS (dB) RESPONSE (dB) P1dB (dBm) RETURN LOSS (dB) GAIN (dB) AMPLIFIERS - LOW NOISE - SMT