HMC668LP3 / 668LP3E v03.0610 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz 7 Typical Applications Features The HmC668lp 3(e) is ideal for: Noise f igure: 0.9 dB o utput ip 3: +33 dBm Cellular/3G and l Te /w imAX/4G BTs & infrastructure Gain: 16 dB f ailsafe o peration: r epeaters and f emtocells Bypass is enabled when l NA is unpowered Tower mounted Amplifiers s ingle s upply: +3V or +5V Test & measurement equipment 2 16 l ead 3x3mm Qf N package: 9 mm Functional Diagram General Description The HmC668lp 3(e) is a versatile, high dynamic range GaAs mmiC l ow Noise Amplifier that integrates a low loss l NA bypass mode on the iC. The amplifier is ide- al for receivers and l NA modules operating between 0.7 and 1.2 GHz and provides 0.9 dB noise figure, 16 dB of gain and +33 dBm ip 3 from a single supply of +5V 57mA. input and output return losses are excellent and no external matching components are required. A single control line is used to switch be- tween l NA mode and a low loss bypass mode. The failsafe topology enables the l NA bypass path, when no DC power is available. The HmC668lp 3(e) offers improved noise figure versus the previously released HmC373lp 3(e). Electrical Specifications, T = +25 C, Rbias = 0 Ohm A l NA mode Bypass mode f ailsafe mode parameter Vdd = +3V Vdd = +5V Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 GHz Gain 12 15 13 16 -2.5 -1.5 -2.5 -1.5 dB Gain Variation o ver Temperature 0.03 0.016 0.0008 0.0008 dB / C Noise f igure 0.85 1.1 0.9 1.1 dB input r eturn l oss 12 13 12 12 dB o utput r eturn l oss 13 14 13 13 dB r everse isolation 22 23 - - dB power for 1dB Compression 13 13 22 24 dBm 1 (p1dB) 2 Third o rder intercept (ip 3) 27 33 26 26 dBm s upply Current (idd) 32 40 57 70 0.05 - mA s witching s peed (90% -10%) 200 - l NA mode to Bypass mode ns Bypass mode to l NA mode ns 85 85 1 p1dB for l NA mode is referenced to rf o UT while p1dB for Bypass and f ailsafe modes are referenced to rf iN. 2 ip 3 for l NA mode is referenced to rf o UT while ip 3 for Bypass and f ailsafe modes are referenced to rf iN. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 7 - 1 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow No ise - sm TIP3 (dBm) HMC668LP3 / 668LP3E v03.0610 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz 7 1 LNA - Broadband Gain & Return Loss LNA - Gain vs. Temperature 25 22 20 +25C S21 20 +85C 15 -40C 10 18 5 Vdd=5V Vdd=3V 0 16 S22 -5 14 -10 -15 12 -20 S11 -25 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 LNA - Return Loss vs. Temperature LNA - Gain vs. Temperature 0 22 +25C +25C 20 +85C -5 +85C -40C -40C Output Return Loss 18 -10 16 -15 14 Input Return Loss -20 12 -25 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) LNA - Output IP3 vs. 3 LNA - Noise Figure vs. Temperature Temperature, Output Power 0 dBm 42 2 48 Vdd=5V 37 1.7 43 Vdd=3V +85C Vdd=5V 1.4 32 38 +25C 1.1 27 33 Vdd=3V 0.8 28 22 0.5 23 +25C 17 +85C -40C -40C 12 0.2 18 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Frequency (GHz) 1 Vdd = 5V 2 Vdd = 3V 3 measurement reference plane shown on evaluation pCB drawing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 7 - 2 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE NOISE FIGURE (dB) GAIN (dB) RESPONSE (dB) IP3 (dBm) RETURN LOSS (dB) GAIN (dB) Amplifiers - l ow No ise - sm T