HMC668LP3 / 668LP3E v03.0610 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz 7 Typical Applications Features The HmC668lp 3(e) is ideal for: Noise f igure: 0.9 dB o utput ip 3: +33 dBm Cellular/3G and l Te /w imAX/4G BTs & infrastructure Gain: 16 dB f ailsafe o peration: r epeaters and f emtocells Bypass is enabled when l NA is unpowered Tower mounted Amplifiers s ingle s upply: +3V or +5V Test & measurement equipment 2 16 l ead 3x3mm Qf N package: 9 mm Functional Diagram General Description The HmC668lp 3(e) is a versatile, high dynamic range GaAs mmiC l ow Noise Amplifier that integrates a low loss l NA bypass mode on the iC. The amplifier is ide- al for receivers and l NA modules operating between 0.7 and 1.2 GHz and provides 0.9 dB noise figure, 16 dB of gain and +33 dBm ip 3 from a single supply of +5V 57mA. input and output return losses are excellent and no external matching components are required. A single control line is used to switch be- tween l NA mode and a low loss bypass mode. The failsafe topology enables the l NA bypass path, when no DC power is available. The HmC668lp 3(e) offers improved noise figure versus the previously released HmC373lp 3(e). Electrical Specifications, T = +25 C, Rbias = 0 Ohm A l NA mode Bypass mode f ailsafe mode parameter Vdd = +3V Vdd = +5V Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 0.7 - 1.2 GHz Gain 12 15 13 16 -2.5 -1.5 -2.5 -1.5 dB Gain Variation o ver Temperature 0.03 0.016 0.0008 0.0008 dB / C Noise f igure 0.85 1.1 0.9 1.1 dB input r eturn l oss 12 13 12 12 dB o utput r eturn l oss 13 14 13 13 dB r everse isolation 22 23 - - dB power for 1dB Compression 13 13 22 24 dBm 1 (p1dB) 2 Third o rder intercept (ip 3) 27 33 26 26 dBm s upply Current (idd) 32 40 57 70 0.05 - mA s witching s peed (90% -10%) 200 - l NA mode to Bypass mode ns Bypass mode to l NA mode ns 85 85 1 p1dB for l NA mode is referenced to rf o UT while p1dB for Bypass and f ailsafe modes are referenced to rf iN. 2 ip 3 for l NA mode is referenced to rf o UT while ip 3 for Bypass and f ailsafe modes are referenced to rf iN. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow No ise - sm TIP3 (dBm) HMC668LP3 / 668LP3E v03.0610 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 700 - 1200 MHz 7 1 LNA - Broadband Gain & Return Loss LNA - Gain vs. Temperature 25 22 20 +25C S21 20 +85C 15 -40C 10 18 5 Vdd=5V Vdd=3V 0 16 S22 -5 14 -10 -15 12 -20 S11 -25 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 LNA - Return Loss vs. Temperature LNA - Gain vs. Temperature 0 22 +25C +25C 20 +85C -5 +85C -40C -40C Output Return Loss 18 -10 16 -15 14 Input Return Loss -20 12 -25 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) LNA - Output IP3 vs. 3 LNA - Noise Figure vs. Temperature Temperature, Output Power 0 dBm 42 2 48 Vdd=5V 37 1.7 43 Vdd=3V +85C Vdd=5V 1.4 32 38 +25C 1.1 27 33 Vdd=3V 0.8 28 22 0.5 23 +25C 17 +85C -40C -40C 12 0.2 18 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) Frequency (GHz) 1 Vdd = 5V 2 Vdd = 3V 3 measurement reference plane shown on evaluation pCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE NOISE FIGURE (dB) GAIN (dB) RESPONSE (dB) IP3 (dBm) RETURN LOSS (dB) GAIN (dB) Amplifiers - l ow No ise - sm T