HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 7 Typical Applications Features Noise f igure: 1.4 dB The HmC669lp 3(e) is ideal for: o utput ip 3: +29 dBm Cellular/3G and l Te /w imAX/4G Gain: 17 dB BTs & infrastructure f ailsafe o peration: r epeaters and f emtocells Bypass is enabled when l NA is unpowered Tower mounted Amplifiers s ingle s upply: +3V or +5V Test & measurement equipment 2 16 l ead 3x3mm Qf N package: 9 mm Functional Diagram General Description The HmC669lp 3(e) is a versatile, high dynamic range GaAs mmiC l ow Noise Amplifier that integrates a low loss l NA bypass mode on the iC. The amplifier is ideal for receivers and l NA modules operating be- tween 1.7 and 2.2 GHz and provides 1.4 dB noise figure, 17 dB of gain and +29 dBm ip 3 from a single supply of +5V 86mA. input and output return losses are excellent and no external matching components are required. A single control line is used to switch between l NA mode and a low loss bypass mode. f ailsafe topology also enables the l NA bidirectional bypass path when no DC power is available. Electrical Specifications, T = +25 C, Rbias = 15 Ohm A l NA mode Bypass mode f ailsafe mode parameter Vdd = +3V Vdd = +5V Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 1.7 - 2.2 1.7 - 2.2 1.7 - 2.2 1.7 - 2.2 GHz Gain 12 15 14 17 -3 -2.1 -3 -2.1 dB Gain Variation o ver Temperature 0.015 0.014 0.0008 0.0008 dB / C Noise f igure 1.4 1.65 1.4 1.65 dB input r eturn l oss 10 11 12 12 dB o utput r eturn l oss 13 13 12 12 dB r everse isolation 28 30 - - dB power for 1dB Compression 11.5 12 21 24 dBm 1 (p1dB) 2 Third o rder intercept (ip 3) 25 29 25 25 dBm s upply Current (idd) 49 59 86 105 0.04 - mA s witching s peed 80 - l NA mode to Bypass mode ns Bypass mode to l NA mode ns 100 100 1 p1dB for l NA mode is referenced to rf o UT while p1dB for Bypass and f ailsafe modes are referenced to rf iN. 2 ip 3 for l NA mode is referenced to rf o UT while ip 3 for Bypass and f ailsafe modes are referenced to rf iN. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 7 - 1 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow No ise - sm THMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE BYPASS MODE, 1700 - 2200 MHz 7 1 LNA - Broadband Gain & Return Loss LNA - Gain vs. Temperature 25 22 20 S21 20 15 10 18 5 Vdd=5V Vdd=3V 0 S22 16 -5 -10 14 +25C -15 +85C S11 -20 -40C 12 -25 -30 10 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 LNA - Return Loss vs. Temperature LNA - Gain vs. Temperature 0 22 +25C -5 20 +85C -40C Input Return Loss 18 -10 16 -15 Output Return Loss 14 -20 +25C +85C -25 12 -40C -30 10 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) LNA - Output IP3 vs. 3 LNA - Noise Figure vs. Temperature Temperature, Output Power 0 dBm 2 34 +85C Vdd=5V 1.8 +25C 30 1.6 1.4 26 1.2 22 1 0.8 Vdd=3V +25C Vdd=5V 18 -40C +85C Vdd=3V 0.6 -40C 0.4 14 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V 2 Vdd = 3V 3 measurement reference plane shown on evaluation pCB drawing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 7 - 2 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE NOISE FIGURE (dB) GAIN (dB) RESPONSE (dB) IP3 (dBm) RETURN LOSS (dB) GAIN (dB) Amplifiers - l ow No ise - sm T