HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 Features Typical Applications The HmC715lp 3(e) is ideal for: Noise f igure: 0.9 dB Cellular/3G and l Te /w imAX/4G Gain: 19 dB BTs & infrastructure o utput ip 3: +33 dBm r epeaters and f emtocells s ingle s upply: +3V to +5V public s afety r adio 2 16 l ead 3x3mm Qf N package: 9 mm Access points Functional Diagram General Description The HmC715lp 3(e) is a GaAs pHemT mmiC l ow Noise Amplifier that is ideal for Cellular/3G and l Te /w imAX/4G basestation front-end receivers operating between 2.1 and 2.9 GHz. The amplifier has been optimized to provide 0.9 dB noise figure, 19 dB gain and +33 dBm output ip 3 from a single supply of +5V. input and output return losses are excellent and the l NA requires minimal external matching and bias decoupling components. The HmC715lp 3(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l NA for each application. Electrical Specifications 1 T = +25 C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V A Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 2.1 - 2.9 2.3 - 2.7 2.1 - 2.9 2.3 - 2.7 mHz Gain 14.5 18 15 18 15.5 19 16.5 19 dB Gain Variation o ver Temperature 0.01 0.01 0.01 0.01 dB/ C Noise f igure 0.9 1.2 0.9 1.2 0.9 1.2 0.9 1.2 dB input r eturn l oss 11.5 11 11.5 11 dB o utput r eturn l oss 14 13.5 12.5 12 dB o utput power for 1 dB 10.5 14.5 12.5 15 15 19 16.5 19.5 dBm Compression (p1dB) s aturated o utput power (psat) 16 16.5 20 20.5 dBm o utput Third o rder intercept (ip 3) 28 28.5 33 33.5 dBm s upply Current (idd) 47 65 47 65 95 126 95 126 mA 1 r bias resistor sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow No ise - sm THMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.1 - 2.9 GHz 7 1 2 1 Broadband Gain & Return Loss Gain vs. Temperature 30 26 24 24 S21 18 22 12 6 20 S11 S22 0 18 -6 +25C -12 16 +85C -40C -18 5V 14 3V -24 -30 12 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 26 0 24 +25C +25C +85C -5 +85C -40C 22 -40C 20 -10 18 16 -15 14 12 -20 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 Reverse Isolation vs. Temperature Output Return Loss vs. Temperature 0 -20 -25 +25C -5 +85C -40C -30 -10 -35 +25C -40 +85C -40C -15 -45 -20 -50 2 2.2 2.4 2.6 2.8 3 2 2.2 2.4 2.6 2.8 3 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V, r bias = 2k 2 Vdd = 3V, r bias = 47k For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) Amplifiers - l ow No ise - sm T