HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7 Features Typical Applications The HmC718lp 4(e) is ideal for: Noise f igure: 0.9 dB Cellular/3G and l Te /w imAX/4G Gain: 32 dB BTs & infrastructure o utput ip3: +40 dBm r epeaters and f emtocells s ingle s upply: +3V to +5V Access points 50 o hm matched input/o utput Test equipment 2 24 l ead 4x4 mm s mT package: 16 mm Functional Diagram General Description The HmC718lp 4(e) is a GaAs pHemT mmiC l ow Noise Amplifier that is ideal for Cellular/3G and l Te /w imAX/4G basestation front-end receivers operating between 600 and 1400 mHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output ip 3 from a single supply of +5V. input and output return losses are excellent and the l NA requires minimal external matching and bias decoupling components. The HmC718lp 4(e) shares the same package and pinout with the HmC719lp 3(e) 1.3 - 2.9 GHz l NA. The HmC718lp 4(e) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l NA for each application. Electrical Specifications, T = +25C, Rbias = 3.92k Ohms* A Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 0.6 - 1.0 1.0 - 1.4 0.6 - 1.0 1.0 - 1.4 GHz Gain 26 30.5 25 27.5 27 32 25 29 dB Gain Variation o ver Temperature 0.01 0.01 0.01 0.01 dB/ C Noise f igure 0.95 0.75 0.95 0.8 dB input r eturn l oss 15 20 15.5 23 dB o utput r eturn l oss 13 10 15.5 13 dB o utput power for 1 dB 13 15.5 13 15.7 19 21.5 19 21.5 dBm Compression (p1dB) s aturated o utput power (psat) 19 19 23.5 23.3 dBm o utput Third o rder intercept (ip 3) 35 34.5 40.5 40 dBm s upply Current (idd) 187 200 187 200 254 281 254 281 mA * r bias resistor sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow N oise - s mTHMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7 1 2 1 Broadband Gain & Return Loss Gain vs. Temperature 40 40 S21 30 +25C 20 35 +85C -40C Vdd=5V 10 Vdd=3V 0 30 -10 -20 25 S22 S11 -30 -40 20 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 40 0 -10 +25C 35 +85C -40C -20 30 -30 25 +25C -40 +85C -40C 20 -50 0.5 0.7 0.9 1.1 1.3 1.5 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 Output Return Loss vs. Temperature Reverse Isolation vs. Temperature 0 0 +25C -10 -5 +85C -40C +25C -20 +85C -40C -10 -30 -15 -40 -20 -50 -25 -60 0.5 0.7 0.9 1.1 1.3 1.5 0.5 0.7 0.9 1.1 1.3 1.5 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V, r bias = 3.92K 2 Vdd = 3V, r bias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) Amplifiers - l o w Noise - sm T