GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Data Sheet HMC7229LS6 FEATURES FUNCTIONAL BLOCK DIAGRAM HMC7229LS6 32 dBm typical saturated output power (P ) at 18% power SAT added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 matched input/output Ceramic, 6 mm 6 mm, high frequency, air cavity package V 1 1 11 V 2 DD DD APPLICATIONS Point to point radios V 3 2 10 V 4 DD DD Point to multipoint radios Very small aperture terminal (VSAT) and satellite V 1 V 2 3 9 GG GG communications (SATCOM) PACKAGE BASE GND NOTES 1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA SHOWN HEREIN WAS MEASURED WITH THESE PINS EXTERNALLY CONNECTED TO RF/DC GROUND. Figure 1. GENERAL DESCRIPTION The HMC7229LS6 is a four stage, gallium arsenide (GaAs), applications such as high capacity, point to point or multipoint pseudomorphic high electron mobility transfer (pHEMT), radios or VSAT/SATCOM applications demanding 32 dBm of monolithic microwave integrated circuit (MMIC), 1 W power efficient saturated output power. The radio frequency (RF) amplifier, with an integrated temperature compensated on-chip input/outputs are internally matched and dc blocked for ease of power detector that operates between 37 GHz to 40 GHz. The integration into higher level assemblies. The HMC7229LS6 is HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated housed in a ceramic, 6 mm 6 mm, high frequency, air cavity output power at 18% PAE at 39 GHz from a 6 V supply. With package that exhibits low thermal resistance and is compatible an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear with surface-mount manufacturing techniques. Rev. 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NIC 4 16 V REF GND 5 15 GND RFIN 6 14 RFOUT GND 7 13 GND NIC V 8 12 DET 13337-001HMC7229LS6 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Interface Schematics .....................................................................6 Applications ...................................................................................... 1 Typical Performance Characteristics .............................................7 Functional Block Diagram .............................................................. 1 Theory of Operation ...................................................................... 11 General Description ......................................................................... 1 Applications Information ............................................................. 12 Revision History ............................................................................... 2 Recommended Bias Sequence .................................................. 12 Specifications .................................................................................... 3 Evaluation Printed Circuit Board (PCB) ................................ 13 Electrical Specifications ............................................................... 3 Typical Application Circuit .......................................................... 14 Absolute Maximum Ratings ........................................................... 4 Outline Dimensions ....................................................................... 15 ESD Caution.................................................................................. 4 Ordering Guide .......................................................................... 15 Pin Configuration and Function Descriptions ............................ 5 REVISION HISTORY 8/2020Rev. D to Rev. E 6/2016Rev. v01.0514 to Rev. B Added Minimum Gate Voltage (VGG1, VGG2) Parameter, This Hittite Microwave Products data sheet has been reformatted Table 2 ......................................................................................................... 4 to meet the styles and standards of Analog Devices, Inc. Updated Outline Dimensions ....................................................... 15 Updated Format ................................................................. Universal Changes to Ordering Guide .......................................................... 15 Changes to General Description Section ....................................... 1 Changes to Table 1 ............................................................................ 3 12/2017Rev. C to Rev. D Added Theory of Operation Section ........................................... 11 Added Applications Information Section and Recommended Changes to Figure 33 ..................................................................... 11 Bias Sequence Section .................................................................... 12 9/2017Rev. B to Rev. C Updated Outline Dimensions ...................................................... 15 Changes to Theory of Operation Section and Figure 33 .......... 11 Changes to Ordering Guide .......................................................... 15 Changes to Ordering Guide .......................................................... 15 Rev. E Page 2 of 15