21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter Data Sheet HMC815B FEATURES FUNCTIONAL BLOCK DIAGRAM Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical NIC 1 24 NIC OIP3: 27 dBm typical NIC 2 23 NIC 2 LO to RF isolation: 10 dB typical NIC 3 22 NIC 2 LO to IF isolation: 15 dB typical NIC 4 21 VDD2 RF return loss: 12 dB typical NIC 5 20 NIC 2 LO return loss: 15 dB typical VDD1 6 19 NIC IF return loss: 15 dB typical NIC 7 18 VDD3 Exposed pad, 4.90 mm 4.90 mm, 32-terminal, ceramic LCC NIC 8 17 NIC APPLICATIONS PACKAGE Point to point and point to multipoint radios BASE Military radars, electronic warfare, and electronic GND NIC = NOT INTERNALLY CONNECTED intelligence Figure 1. Satellite communications Sensors GENERAL DESCRIPTION The HMC815B is a compact gallium arsenide (GaAs), The HMC815B is a smaller alternative to hybrid style single pseudomorphic high electron mobility transistor (pHEMT), sideband (SSB) downconverter assemblies, and it eliminates the monolithic microwave integrated circuit (MMIC) upconverter need for wire bonding by allowing the use of surface-mount in a RoHS compliant package that operates from 21 GHz to manufacturing techniques. 27 GHz. This device provides a small signal conversion gain of The HMC815B is available in 4.90 mm 4.90 mm, 32-terminal 12 dB and a sideband rejection of 20 dBc. The HMC815B ceramic LCC package and operates over the 40C to +85C utilizes a driver amplifier proceeded by an in phase/quadrature temperature range. An evaluation board for the HMC815B is (I/Q) mixer where the LO is driven by an active 2 multiplier. also available upon request. IF1 and IF2 mixer inputs are provided, and an external 90 hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 2018 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. LOIN 9 32 GND 31 IF2 GND 10 NIC 11 30 GND VGG 12 29 IF1 GND 13 28 NIC RFOUT 14 27 NIC GND 15 26 NIC NIC 16 25 NIC 13597-001HMC815B Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 IF = 100 MHz, IF Input Power = 0 dBm, Upper Sideband (Low-Side LO) ............................................................................ 13 Applications ....................................................................................... 1 IF = 2500 MHz, RF Input Power = 0 dBm, Upper Sideband Functional Block Diagram .............................................................. 1 (Low-Side LO) ............................................................................ 15 General Description ......................................................................... 1 IF = 3750 MHz, RF Input Power = 0 dBm, Upper Sideband Revision History ............................................................................... 2 (Low-Side LO) ............................................................................ 17 Specifications ..................................................................................... 3 Isolation and Return Loss ......................................................... 19 Absolute Maximum Ratings ............................................................ 4 IF Bandwidth Performance: Lower Sideband (High-Side LO) .. 22 Thermal Resistance ...................................................................... 4 IF Bandwidth Performance: Upper Sideband (Low-Side LO) ... 23 ESD Caution .................................................................................. 4 Spurious Performance ............................................................... 24 Pin Configuration and Function Descriptions ............................. 5 Theory of Operation ...................................................................... 26 Interface Schematics..................................................................... 6 Applications Information .............................................................. 27 Typical Performance Characteristics ............................................. 7 Typical Application Circuit ....................................................... 27 IF = 2500 MHz, IF Input Power = 0 dBm, Lower Sideband Evaluation Board Information ................................................. 28 (High-Side LO) ............................................................................. 7 Outline Dimensions ....................................................................... 30 IF = 100 MHz, IF Input Power = 0 dBm, Lower Sideband Ordering Guide .......................................................................... 30 (High-Side LO) ............................................................................. 9 IF = 3750 MHz, IF Input Power = 0 dBm, Lower Sideband (High-Side LO) ........................................................................... 11 REVISION HISTORY 1/2018Revision 0: Initial Version Rev. 0 Page 2 of 30