HMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 7 Features Typical Applications The HmC817lp 4e is ideal for: Noise f igure: 0.5 dB Cellular/3G and l Te /w imAX/4G Gain: 16 dB BTs & infrastructure o utput ip3: +37 dBm r epeaters and f emtocells s ingle s upply: +3V to +5V multi-Channel Applications 50 o hm matched input/o utput Access points 2 24 l ead 4x4mm Qf N package: 16 mm Functional Diagram General Description The HmC817lp 4e is a GaAs pHemT Dual Chan- nel l ow Noise Amplifier that is ideal for Cellular/3G and l Te /w imAX/4G basestation front-end receivers operating between 550 and 1200 mHz. The amplifier has been optimized to provide 0.5 dB noise figure, 24 dB gain and +37 dBm output ip 3 from a single supply of +5V. input and output return losses are excellent with minimal external matching and bias decoupling components. The HmC817lp 4e shares the same package and pinout with the HmC816lp 4e and HmC818lp 4e l NAs. The HmC817lp 4e can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the l NA for each application. Electrical Specifications, T = +25 C, A Rbias 1, 2 = 10k Ohms* Vdd = Vdd1 = Vdd2 = +5V, Idd = Idd1 = Idd2 Vdd = +3 V Vdd = +5 V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. f requency r ange 698 - 960 550 - 1200 698 - 960 550 - 1200 mHz Gain 13 16 11 15 13.5 16 11.5 16 dB Gain Variation o ver Temperature 0.003 0.003 0.005 0.005 dB/ C Noise f igure 0.5 0.8 0.5 1.1 0.55 0.85 0.6 1.1 dB input r eturn l oss 28 22 22 17 dB o utput r eturn l oss 12 14 12 15 dB o utput power for 1 dB 14 16 12.5 16.5 18.5 20.5 16.5 21 dBm Compression (p1dB) s aturated o utput power (psat) 17 17.5 21 21.5 dBm o utput Third o rder intercept (ip 3) 31 30 37 37 dBm s upply Current (idd) 24 34 44 24 34 44 65 95 124 65 95 124 mA * r bias resistor sets current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 1 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ow N oise - s mTHMC817LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 550 - 1200 MHz 7 1 Broadband Gain & Return Loss Gain vs. Temperature 25 22 S21 15 20 +25C +85C - 40C 5 Vdd= 5V 18 Vdd= 3V -5 16 S22 -15 14 -25 12 S11 -35 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 2 1 Gain vs. Temperature Input Return Loss vs. Temperature 22 0 -5 20 +25 C +25C +85 C +85C - 40 C -10 - 40C 18 -15 16 -20 14 -25 12 -30 10 -35 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 1 1 Output Return Loss vs. Temperature Reverse Isolation vs. Temperature 0 0 -5 -5 +25 C -10 -10 +85 C - 40 C -15 -15 +25 C -20 +85 C -20 - 40 C -25 -25 -30 -30 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 FREQUENCY (GHz) FREQUENCY (GHz) 1 Vdd = 5V 2 Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE RETURN LOSS (dB) GAIN (dB) RESPONSE (dB) ISOLATION (dB) RETURN LOSS (dB) GAIN (dB) Amplifiers - l o w Noise - sm T