20 GHz to 42 GHz, Wideband I/Q Mixer Data Sheet HMC8192-Die FEATURES FUNCTIONAL BLOCK DIAGRAM Passive, wideband I/Q mixer 1 RF and LO range: 20 GHz to 42 GHz HMC8192-DIE Wide IF bandwidth of dc to 5 GHz Single-ended RF, LO, and IF 4 Conversion loss: 10 dB typical, from 20 GHz to 32 GHz RF Image rejection: 25 dB typical, from 20 GHz to 32 GHz Noise figure: 12 dB typical, from 20 GHz to 32 GHz 7 6 Input IP3 (downconverter): 24 dBm typical, from 20 GHz to 32 GHz Figure 1. Input P1dB (downconverter) compression: 15 dBm typical, from 20 GHz to 32 GHz Input IP2: 56 dB typical, from 20 GHz to 32 GHz LO to RF isolation: 42 dB typical, from 20 GHz to 32 GHz LO to IFx isolation: 51 dB typical, from 20 GHz to 32 GHz RF to IF isolation: 30 dB typical, from 20 GHz to 32 GHz Amplitude balance: 3 dB typical Phase balance (downconverter): 11 typical RF return loss: 14 dB typical LO return loss: 11 dB typical IFx return loss: 20 dB typical Die size: 2.160 mm 1.430 mm 0.102 mm APPLICATIONS Test and measurement instrumentation Military, radar, aerospace, and defense applications Microwave point to point base stations GENERAL DESCRIPTION The HMC8192-Die is a passive, wideband, inphase/quadrature eliminating the need for additional filtering of unwanted (I/Q), monolithic microwave integrated circuit (MMIC) mixer sidebands. The mixer also provides excellent LO to RF and LO that can be used either as an image rejection mixer for receiver to IFx isolation of 42 dB and 51 dB, respectively, from 20 GHz operations or as a single-sideband upconverter for transmitter to 32 GHz, and reduces the effect of LO leakage to ensure signal operations. With a radio frequency (RF) and local oscillator integrity. (LO) range of 20 GHz to 42 GHz, and an intermediate frequency As a passive mixer, the HMC8192-Die does not require any dc (IF) bandwidth of dc to 5 GHz, the HMC8192-Die is ideal for power sources. The HMC8192-Die offers a lower noise figure applications requiring a wide frequency range, excellent RF compared to an active mixer, ensuring superior dynamic range performance, and a simple design with fewer components. A for high performance and precision applications. single HMC8192-Die can replace multiple narrow-band mixers in The HMC8192-Die is fabricated on a gallium arsenide (GaAs), a design. metal semiconductor field effect transistor (MESFET) process and The inherent I/Q architecture of the HMC8192-Die offers uses Analog Devices, Inc., mixer cells and a 90 hybrid. The excellent image rejection, typically better than 25 dBc, HMC8192-Die operates over a 55C to +85C temperature range. Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 2019 Analog Devices, Inc. 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LO IF2 IF1 17252-001HMC8192-Die Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Isolation and Return Loss Without External 90 Hybrid at the IFx Ports ...................................................................................... 11 Applications ....................................................................................... 1 IF Bandwidth Performance ....................................................... 13 Functional Block Diagram .............................................................. 1 Amplitude and Phase Imbalance Performance: Downconverter, General Description ......................................................................... 1 Upper Sideband (Low-Side LO) ................................................. 15 Revision History ............................................................................... 2 Spurious and Harmonics Performance ................................... 16 Specifications ..................................................................................... 3 Theory of Operation ...................................................................... 18 20 GHz to 32 GHz ........................................................................ 3 Applications Information .............................................................. 19 32 GHz to 42 GHz ........................................................................ 4 Mounting and Bonding Techniques for Millimeter Wave GaAs Absolute Maximum Ratings ............................................................ 5 MMiCs ............................................................................................. 20 Thermal Resistance ...................................................................... 5 Handling Precautions ................................................................ 20 ESD Caution .................................................................................. 5 Mounting ..................................................................................... 20 Pin Configuration and Function Descriptions ............................. 6 Wire Bonding .............................................................................. 20 Interface Schematics..................................................................... 6 Outline Dimensions ....................................................................... 21 Typical Performance Characteristics ............................................. 7 Ordering Guide .......................................................................... 21 Downconverter Performance ...................................................... 7 Upconverter Performance ............................................................. 9 REVISION HISTORY 3/2019Revision 0: Initial Version Rev. 0 Page 2 of 21