0.4 GHz to 6 GHz, 35 W, GaN, Power Amplifier Data Sheet HMC8205BCHIPS FEATURES FUNCTIONAL BLOCK DIAGRAM High output power: 45.5 dBm typical at P = 24 dBm IN 2 High power gain: 22 dB typical at P = 24 dBm IN V 2 DD High PAE: 40% typical at P = 28 dBm IN Die size: 4.8 mm 3.4 mm 0.1 mm 3 RFOUT APPLICATIONS Military jammers V 1 GG 4 Commercial and military radar 1 Power amplifier stage for wireless infrastructure RFIN V 1 DD Test and measurement equipment 5 Figure 1. GENERAL DESCRIPTION The HMC8205BCHIPS is a gallium nitride (GaN), broadband amplifier. In addition, dc blocking capacitors for the RFIN and power amplifier that delivers 45.5 dBm (35 W) with 40% power RFOUT pins are integrated into the HMC8205BCHIPS. added efficiency (PAE) across an instantaneous bandwidth of The HMC8205BCHIPS is ideal for pulsed or continuous wave 0.4 GHz to 6 GHz. No external matching is required to achieve (CW) applications, such as military jammers, wireless full band operation. No external inductor is required to bias the infrastructure, radar, and general-purpose amplification. Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. Tel: 781.329.4700 20182020 Analog Devices, Inc. All rights reserved. No license is granted by implication or otherwise under any patent or patent rights of Analog Technical Support www.analog.com Devices. Trademarks and registered trademarks are the property of their respective owners. 13790-001HMC8205BCHIPS Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics .............................................7 Applications ...................................................................................... 1 Theory of Operation ...................................................................... 15 Functional Block Diagram .............................................................. 1 Applications Information ............................................................. 16 General Description ......................................................................... 1 Recommended Bias Sequencing .............................................. 16 Revision History ............................................................................... 2 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs .............................................................................. 16 Specifications .................................................................................... 3 Typical Application Circuit .......................................................... 18 Electrical Specifications ............................................................... 3 Assembly Diagram ..................................................................... 18 Absolute Maximum Ratings ........................................................... 5 Outline Dimensions ....................................................................... 19 Thermal Resistance ...................................................................... 5 Ordering Guide .......................................................................... 19 ESD Caution.................................................................................. 5 Pin Configuration and Function Description .............................. 6 Interface Schematics .................................................................... 6 REVISION HISTORY 4/2020Rev. 0 to Rev. A Updated Outline Dimensions ....................................................... 19 11/2018Revision 0: Initial Version Rev. A Page 2 of 19