HMC8412TCPZ-EP-PT Analog Devices

REVISIONS LTR DESCRIPTION DATE APPROVED Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV REV STATUS OF PAGES PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DLA LAND AND MARITIME PMIC N/A RICK OFFICER COLUMBUS, OHIO 43218-3990 1. SCOPE 1.1 Scope. This drawing documents the general requirements of a high performance gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) 0.4 GHZ to 11 GHz low noise amplifier microcircuit, with an operating temperature range of -55C to +125C. 1.2 Vendor Item Drawing Administrative Control Number. The manufacturers PIN is the item of identification. The vendor item drawing establishes an administrative control number for identifying the item on the engineering documentation: V62/21602 - 01 X E Drawing Device type Case outline Lead finish number (See 1.2.1) (See 1.2.2) (See 1.2.3) 1.2.1 Device type(s). Device type Generic Circuit function 01 HMC8412TCPZ-EP GaAs, MMIC, pHEMT 0.4 GHZ to 11 GHz low noise amplifier 1.2.2 Case outline(s). The case outline(s) are as specified herein. Outline letter Number of pins JEDEC PUB 95 Package style X 6 See figure 1 Lead frame chip scale package (LFCSP) 1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer: Finish designator Material A Hot solder dip B Tin-lead plate C Gold plate D Palladium E Gold flash palladium F Tin-lead alloy (BGA/CGA) Z Other SIZE CODE IDENT NO. DWG NO. DLA LAND AND MARITIME COLUMBUS, OHIO A 16236 V62/21602 REV PAGE 2