HMC921LP4E v02.0312 GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz Typical Applications Features The HmC921lp 4e is ideal for: High o utput ip 3: +48 dBm Cellular/3G & WiMAX/LTE/4G High o utput p1dB: +33 dBm Fixed Wireless & WLAN High Gain: 16 dB 900 mHz CATV, Cable Modem & DBS s ingle s upply: +5V Microwave Radio & Test Equipment 32% pAe +33 dBm pout IF & RF Applications Adjustable Bias Current 24 l ead 4x4 mm sm T package: 16 mm Functional Diagram General Description The HmC921lp 4e is a high linearity GaAs HBT mmiC 2 watt power amplifier operating from 0.4 to 2.7 GHz and is housed in a r oHs compliant 4x4 mm Qfn leadless package. The HmC921lp 4e utilizes a minimum number of external components and operates from a single +5V supply. This versatile power amplifier can be biased for both low quiescent current and high quiescent current modes by adjusting a single external resistor. 1 Electrical Specifications, T = +25C, Vcc1 = Vcc2 = VEN = +5V A 400 mA (r 1 = 270 ) parameter min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. Units f requency r ange 350 - 500 800 - 1000 1800 - 2000 2000 - 2200 2500 - 2800 mHz Gain 17 19 14 16 9 11 9.5 10.5 8 9 dB Gain Variation o ver Temperature 0.01 0.01 0.01 0.01 0.01 dB / C input r eturn l oss 9 12 10 15 5 10 8 12 6 11 dB o utput r eturn l oss 6 10 5 9 8 9 6 7 9 10 dB o utput power for 1dB 32.5 34 30.5 32 31 32.5 32 32.5 33 33.3 dBm Compression (p1dB) s aturated o utput power (psat) 35 34 34 34 34.5 dBm o utput Third o rder 47 44 43 43 45 dBm intercept (ip 3) n oise f igure 12.9 9 8.5 6.9 6.5 dB s upply Current (icq) ien 8 8 8 8 8 mA icc1 12 12 12 12 12 mA icc2 400 400 400 400 400 mA 1 s pecifications and data r eflect H mC921lp 4e measured using the respective application circuits for each designated frequency band found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 1 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE Amplifiers - l ine Ar & powe r - sm THMC921LP4E v02.0312 GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz 1 Electrical Specifications, T = +25C, Vcc1 = Vcc2 = VEN = +5V A 700 mA (r 1 = 130 ) parameter min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. Units f requency r ange 350 - 500 800 - 1000 1800 - 2000 2000 - 2200 2600 - 2800 mHz Gain 19 19.5 14 16 9 11 10.3 10.8 8 9 dB Gain Variation o ver Temperature 001 0.01 0.01 0.01 0.01 dB / C input r eturn l oss 9 12 11 15 6 10 9 13 6 12 dB o utput r eturn l oss 6 10 6 9 8 9 6 7.5 9 10 dB o utput power for 1dB 33 34.5 31 32.5 31.5 33 32.8 33.5 33 34 dBm Compression (p1dB) s aturated o utput power (psat) 35 34 34 34.5 35 dBm o utput Third o rder 43 45 46 47 47 dBm intercept (ip 3) n oise f igure 14 9 8.5 8 8 dB s upply Current (icq) ien 13 13 13 13 13 mA icc1 14 14 14 14 14 mA icc2 700 700 700 700 700 mA 1 s pecifications and data r eflect H mC921lp 4e measured using the respective application circuits for each designated frequency band found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. 450 MHz Tune Broadband Gain & Return Loss 400mA Broadband Gain & Return Loss 700mA 20 20 15 15 S21 S21 10 10 S11 S11 S22 S22 5 5 0 0 -5 -5 -10 -10 -15 -15 -20 -20 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FREQUENCY (GHz) FREQUENCY (GHz) Gain vs. Temperature 400mA Gain vs. Temperature 700mA 20 20 18 18 16 16 14 14 +25 C 12 12 +85 C +25 C - 40 C +85 C - 40 C 10 10 8 8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FREQUENCY (GHz) FREQUENCY (GHz) Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 2 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Application Support: Phone: 978-250-3343 or apps hittite.com OBSOLETE GAIN (dB) RESPONSE (dB) GAIN (dB) RESPONSE (dB) Amplifiers - l ine Ar & powe r - sm T