HMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Typical Applications Features This HMC-AUH232 is ideal for: Small Signal Gain: 12 dB Output Voltage: up to 8V pk-pk 40 Gb/s Lithium Niobate/ Mach Zender Fiber Optic Modulators Single-Ended I/Os Broadband Gain Block for Test & Measurement High Speed Performance: 46 GHz 3 dB Bandwidth Equipment Low Power Dissipation: 0.9 W Broadband Gain Block for RF Applications 4 Small Die Size: 2.1 x 1.70 x 0.1 mm Military & Space General Description Functional Diagram The HMC-AUH232 is a GaAs MMIC HEMT Distributed Driver Ampl ifier die which operates between DC and 43 GHz and provides a typical 3 dB bandwidth of 46 GHz. The ampl ifier provides 12 dB of small signal gain while requiring only 180 mA from a +5V supply. The HMC-AUH232 exhibits very good gain and phase ripple to 40 GHz, and can output up to 8V peak-to-peak with low jitter, making it ideal for use in broadband wireless, fi ber optic communication and test equipment applications. The ampl ifier die occupies less than 3.6 mm2 which facilitates easy integration into Multi-Chip-Modules (MCMs). The HMC-AUH232 requires external bias-tee as well as off-chip blocking components and bypass capacitors for the DC supply lines. A gate voltage adjust, Vgg2 is provided for limited gain adjustment, while Vgg1 adjusts the bias current for the device. Electrical Specifi cations*, T = +25 C A Parameter Min. Typ. Max. Units Frequency Range DC - 43 GHz 0.5 - 5.0 GHz 12 14 dB Small Signal Gain 35 - 45 GHz 10 12.5 dB Input Return Loss 10 dB Output Return Loss 8.5 dB Supply Current 180 225 mA 3 dB Bandwidth 43 46 GHz Gain Ripple (5 to 35 GHz) 0.6 1 dB 0.5 - 5.0 GHz 14 20 ps 1 Group Delay Variation 5 - 30 GHz 10 11 ps 30 - 45 GHz 22 25 ps Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 4 - 2 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIPHMC-AUH232 v02.0209 GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz Electrical Specifi cations (Continued)* Parameter Min. Typ. Max. Units 2 10% to 90% Rise / Fall Time 6 - 12 ps 3 Output Voltage Level 8V p-p Additive jitter (RMS) 0.4 ps 1 dB Output Gain Compression Point at 20 GHz 16.5 dBm 4 20 GHz Pin= 15 dBm 22 22 dBm Output Power 4 40 GHz Pin= 15 dBm 17 19.5 dBm 4 Power Dissipation 0.9 1.25 W 5 GHz 5.4 dB 10 & 15 GHz 4.2 dB 20 GHz 4.6 dB Noise Figure 25 GHz 5.4 dB 30 GHz 8.3 dB 35 GHz 7.4 dB 40 GHz 9.1 dB 1 Measured with a 1 GHz aperture 4 Veri fied at RF on-wafer probe. Vgg1 is adjusted until the drain cur- rent is 200 mA and Vgg2= 1.5 V.The drain voltage is applied through 2 Measurement limited by rise/fall time of input reference signal the RF output port using a bias tee with 5 volts on the bias Tee. 3 With a 2.7 V input signal P-P *Unless otherwise indicated, all measurements are from probed die Recommended Operating Conditions Reliability Characteristics Parameter Symbol Min. Typ. Max. Units Parameter Symbol Typ. Units Positive Supply Voltage V 56 V Activation Energy E 1.7 eV D A Positive Supply Current I 150 180 225 mA Median time to Failure (MTF) D 9 MTF 6 x 10 Hours 125 C Channel Temperature RF Input Power 12 16 dBm Bias Current Adjust Vgg1 -1.5 -0.2 V Output Voltage Adjust Vgg2 0 1.5 2 V Operating Temperature T 025 85 C OP Power Dissipation P 0.9 1.25 W D Thermal Characteristics P T T RMTF DISS BASE CH Parameter (W) (C) (C) (C/W) (Hrs) 8 Thermal Resistance to back side of chip 1.25 85 145 48 5.8 x 10 Thermal resistance to backside of carrier using 25.4 8 1.25 85 155 56 1.8 x 10 um of 84-1LMIT epoxy 7 Thermal Resistance to back side of chip 1.25 110 170 48 3.9 x 10 Thermal resistance to backside of carrier using 25.4 7 1.25 110 180 56 1.4 x 10 um of 84-1LMIT epoxy Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., For price, delivery, and to place orders, please contact Hittite Microwave Corporation: responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Phone: 781-329-4700 Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 4 - 3 Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Order On-line at www.hittite.com MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP