LT1169 Dual Low Noise, Picoampere Bias Current, JFET Input Op Amp DESCRIPTIO FEATURES n Input Bias Current, Warmed Up: 20pA Max The LT1169 achieves a new standard of excellence in noise n 100% Tested Low Voltage Noise: 8nV/Hz Max performance for a dual JFET op amp. For the first time low n S8 and N8 Package Standard Pinout voltage noise (6nV/Hz) is simultaneously offered with n extremely low current noise (1fA/Hz), providing the low- Very Low Input Capacitance: 1.5pF n est total noise for high impedance transducer applications. Voltage Gain: 1.2 Million Min n Unlike most JFET op amps, the very low input bias current Offset Voltage: 2mV Max 13 n (5pA Typ) is maintained over the entire common mode Input Resistance: 10 n range which results in an extremely high input resistance Gain-Bandwidth Product: 5.3MHz Typ 13 n (10 ). When combined with a very low input capaci- Guaranteed Specifications with 5V Supplies n tance (1.5pF) an extremely high input impedance results, Guaranteed Matching Specifications making the LT1169 the first choice for amplifying low level signals from high impedance transducers. The low input PP IC I A L AT S capacitance also assures high gain linearity when buffering n AC signals from high impedance transducers. Photocurrent Amplifiers n Hydrophone Amplifiers The LT1169 is unconditionally stable for gains of 1 or more, n High Sensitivity Piezoelectric Accelerometers even with 1000pF capacitive loads. Other key features are n Low Voltage and Current Noise Instrumentation 0.6mV V and a voltage gain over 4 million. Each indi- OS Amplifier Front Ends vidual amplifier is 100% tested for voltage noise, slew rate n Two and Three Op Amp Instrumentation Amplifiers (4.2V/s), and gain-bandwidth product (5.3MHz). n Active Filters The LT1169 is offered in the S8 and N8 packages. A full set of matching specifications are provided for precision instrumentation amplifier front ends. Specifica- tions at 5V supply operation are also provided. For an , LTC and LT are registered trademarks of Linear Technology Corporation. even lower voltage noise please see the LT1113 data sheet. TYPICAL APPLICATI Low Noise Light Sensor with DC Servo 1kHz Output Voltage Noise C1 Density vs Source Resistance 2pF 10k R1 2 V N 1M 1k + 1 1/2 LT1169 V OUT R SOURCE C2 3 + 0.022F D2 100 1N914 C D +V R2 8 100k D1 6 R3 V 10 N 1N914 1k 7 SOURCE 2N3904 1/2 LT1169 T = 25C A RESISTANCE 5 V = 15V S ONLY HAMAMATSU R5 R4 1 4 S1336-5BK 10k 1k 100 1k 10k 100k 1M 10M 1G 100M V (908) 231-0960 R2C2 > C1R1 SOURCE RESISTANCE () C = PARASITIC PHOTODIODE CAPACITANCE D 2 2 V = (V ) + 4kTR + 2qI R V V = 100mV/WATT FOR 200nm WAVE LENGTH N OP AMP S B S OUT 330mV/WATT FOR 633nm WAVE LENGTH LT1169 TA01 LT1169 TA02 1 TOTAL 1kHz VOLTAGE NOISE DENSITY (nV/ Hz) + O U UO ULT1169 / ABSOLUTEXAI U RATI GS PACKAGE ORDER I FOR ATIO Supply Voltage TOP VIEW ORDER PART 55C to 105C ............................................... 20V + NUMBER OUT A 1 V 8 105C to 125C ............................................... 16V IN A 2 7 OUT B A Differential Input Voltage ...................................... 40V LT1169CN8 +IN A 3 6 IN B B Input Voltage (Equal to Supply Voltage) ............... 20V LT1169CS8 V 4 5 +IN B Output Short-Circuit Duration......................... Indefinite N8 PACKAGE S8 PACKAGE S8 PART MARKING Operating Temperature Range............... 40C to 85C 8-LEAD PDIP 8-LEAD PLASTIC SO Storage Temperature Range ................ 65C to 150C T = 150C, = 80C/W (N8) JMAX JA 1169 T = 160C, = 190C/W (S8) JMAX JA Lead Temperature (Soldering, 10 sec) ................ 300C Consult factory for Industrial and Military grade parts. ELECTRICAL CHARACTERISTICS V = 15V, V = 0V, T = 25C, unless otherwise noted. S CM A SYMBOL PARAMETER CONDITIONS (Note 1) MIN TYP MAX UNITS V Input Offset Voltage 0.60 2.0 mV OS V = 5V 0.65 2.2 mV S I Input Offset Current Warmed Up (Note 2) 2.5 15 pA OS T = 25C (Note 5) 0.7 4 pA J I Input Bias Current Warmed Up (Note 2) 4.0 20 pA B T = 25C (Note 5) 1.5 5 pA J e Input Noise Voltage 0.1Hz to 10Hz 2.4 V n P-P Input Noise Voltage Density f = 10Hz 17 nV/Hz O f = 1000Hz 6 8 nV/Hz O i Input Noise Current Density f = 10Hz, f = 1kHz (Note 3) 1 fA/Hz n O O R Input Resistance IN 14 Differential Mode 10 13 Common Mode V = 10V to 13V 10 CM C Input Capacitance 1.5 pF IN V = 5V 2.0 pF S V Input Voltage Range (Note 4) 13.0 13.5 V CM 10.5 11.0 V CMRR Common Mode Rejection Ratio V = 10V to 13V 82 95 dB CM PSRR Power Supply Rejection Ratio V = 4.5V to 20V 83 98 dB S A Large-Signal Voltage Gain V = 12V, R = 10k 1000 4500 V/mV VOL O L V = 10V, R = 1k 500 3000 V/mV O L V Output Voltage Swing R = 10k 13.0 13.8 V OUT L R = 1k 12.0 13.0 V L SR Slew Rate R 2k (Note 6) 2.4 4.2 V/s L GBW Gain-Bandwidth Product f = 100kHz 3.3 5.3 MHz O Channel Separation f = 10Hz, V = 10V, R = 1k 126 dB O O L I Supply Current per Amplifier 5.3 6.50 mA S V = 5V 5.3 6.45 mA S V Offset Voltage Match 0.8 3.5 mV OS + I Noninverting Bias Current Match Warmed Up (Note 2) 3 20 pA B CMRR Common Mode Rejection Match (Note 8) 78 94 dB PSRR Power Supply Rejection Match (Note 8) 80 95 dB 2 U WU U W W W