LTC1163/LTC1165 Triple 1.8V to 6V High-Side MOSFET Drivers DESCRIPTIO FEATURES n Operates from 1.8V to 6V The LTC1163/LTC1165 triple low voltage MOSFET drivers n 0.01A Standby Current make it possible to switch supply or ground referenced n 95A Operating Current per Channel at 3.3V loads through inexpensive, low R N-channel switches DS(ON) n Fully Enhances N-Channel Switches from as little as a 1.8V supply. The LTC1165 has inverting n No External Charge Pump Components inputs and makes it possible to directly replace P-channel n Built-In Gate Voltage Clamps MOSFET switches while maintaining system drive polar- n Easily Protected Against Supply Transients ity. The LTC1163 has noninverting inputs. n Controlled Switching ON and OFF Times Micropower operation, with 0.01A standby current and n Compatible with 5V, 3V and Sub-3V Logic Families 95A operating current, coupled with a power supply n Available in 8-Pin SOIC range of 1.8V to 6V, make the LTC1163/LTC1165 ideally suited for 2- to 4-cell battery-powered applications. The PPLICATI S A LTC1163/LTC1165 are also well suited for sub-3V, 3.3V and 5V nominal supply applications. n PCMCIA Card 3.3V/5V Switch n 2-Cell High-Side Load Switching The LTC1163/LTC1165 internal charge pumps boost the n Boost Regulator Shutdown to Zero Standby Current gate voltage 8V above a 3.3V rail, fully enhancing inexpen- n Replacing P-Channel Switches sive N-channels for high- or low-side switch applications. n Notebook Computer Power Management The LTC1163/LTC1165 are available in both an 8-pin DIP n Palmtop Computer Power Management and an 8-pin SOIC. n Portable Medical Equipment n Mixed 3.3V and 5V Supply Switching TYPICAL APPLICATI 2-Cell Triple High-Side Switch MOSFET Switch Gate Voltage (1.8V TO 3V) 18 + 2-CELL + 16 BATTERY 10F PACK 14 RFD14N05LSM RFD14N05LSM RFD14N05LSM 12 V S IN1 OUT1 CONTROL 10 LTC1163 IN2 OUT2 LOGIC LTC1165 8 OR P IN3 OUT3 GND 6 2-CELL 2-CELL 2-CELL 4 LOAD LOAD LOAD LTC1163 HAS NONINVERTING INPUTS 2 LTC1165 HAS INVERTING INPUTS 0 LTC1163/65 TA01 01526 3 4 SUPPLY VOLTAGE (V) LTC1163/65 TA02 1 GATE OUTPUT VOLTAGE (V) UO UO ULTC1163/LTC1165 ABSOLUTEXAI U RATI GS Supply Voltage ......................................................... 7V Operating Temperature Range Any Input Voltage .......................... 7V to (GND 0.3V) LTC1163C/LTC1165C ........................... 0C to 70C Any Output Voltage ....................... 20V to (GND 0.3V) Storage Temperature Range ................ 65C to 150C Current (Any Pin)................................................. 50mA Lead Temperature (Soldering, 10 sec)................. 300C /O PACKAGE RDER I FOR ATIO ORDER PART ORDER PART TOP VIEW TOP VIEW NUMBER NUMBER IN1 IN1 1 8 V 1 8 V S S IN2 OUT1 LTC1163CS8 IN2 2 7 OUT1 2 7 LTC1163CN8 LTC1165CS8 IN3 3 OUT2 IN3 OUT2 6 3 6 LTC1165CN8 GND GND 4 5 OUT3 OUT3 4 5 S8 PART MARKING N8 PACKAGE S8 PACKAGE 8-LEAD PLASTIC DIP 8-LEAD PLASTIC SOIC 1163 = 100C, = 150C/W T = 100C, = 130C/W T JMAX JA JMAX JA 1165 V = 1.8V to 6V, T = 25C, unless otherwise noted. ELECTRICAL CHARACTERISTICS S A LTC1163C/LTC1165C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Quiescent Current OFF V = 1.8V, V = V = V = V (Note 1,2) 0.01 1 A Q S IN1 IN2 IN3 OFF V = 3.3V, V = V = V = V (Note 1,2) 0.01 1 A S IN1 IN2 IN3 OFF V = 5V, V = V = V = V (Note 1,2) 0.01 1 A S IN1 IN2 IN3 OFF Quiescent Current ON V = 1.8V, V = V (Note 2,3) 60 120 A S IN ON V = 3.3V, V = V (Note 2,3) 95 200 A S IN ON V = 5V, V = V (Note 2,3) 180 400 A S IN ON V Input High Voltage 1.8V < V < 2.7V l 80% V V INH S S 2.7V < V < 6V l 70% V V S S V Input Low Voltage 1.8V < V < 6V l 15% V V INL S S I Input Current 0V V V l 1 A IN IN S C Input Capacitance 5pF IN V V Gate Voltage Above Supply V = 1.8V, V = V (Note 2) l 3.5 4.1 6.0 V GATE S S IN ON V = 2V, V = V (Note 2) l 4.0 4.6 7.0 V S IN ON V = 2.2V, V = V (Note 2) l 4.5 5.2 8.0 V S IN ON V = 3.3V, V = V (Note 2) l 6.0 8.0 9.5 V S IN ON V = 5V, V = V (Note 2) l 5.0 9.0 13.0 V S IN ON t Turn-ON Time V = 3.3V, C = 1000pF ON S GATE Time for V > V + 1V 40 120 400 s GATE S Time for V > V + 2V 60 180 600 s GATE S V = 5V, C = 1000pF S GATE Time for V > V + 1V 30 95 300 s GATE S Time for V > V + 2V 40 130 400 s GATE S 2 U WU U W W W