LTC1163/LTC1165
Triple 1.8V to 6V High-Side
MOSFET Drivers
DESCRIPTIO
FEATURES
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Operates from 1.8V to 6V
The LTC1163/LTC1165 triple low voltage MOSFET drivers
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0.01A Standby Current
make it possible to switch supply or ground referenced
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95A Operating Current per Channel at 3.3V
loads through inexpensive, low R N-channel switches
DS(ON)
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Fully Enhances N-Channel Switches
from as little as a 1.8V supply. The LTC1165 has inverting
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No External Charge Pump Components
inputs and makes it possible to directly replace P-channel
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Built-In Gate Voltage Clamps
MOSFET switches while maintaining system drive polar-
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Easily Protected Against Supply Transients
ity. The LTC1163 has noninverting inputs.
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Controlled Switching ON and OFF Times
Micropower operation, with 0.01A standby current and
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Compatible with 5V, 3V and Sub-3V Logic Families
95A operating current, coupled with a power supply
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Available in 8-Pin SOIC
range of 1.8V to 6V, make the LTC1163/LTC1165 ideally
suited for 2- to 4-cell battery-powered applications. The
PPLICATI S
A
LTC1163/LTC1165 are also well suited for sub-3V, 3.3V
and 5V nominal supply applications.
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PCMCIA Card 3.3V/5V Switch
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2-Cell High-Side Load Switching
The LTC1163/LTC1165 internal charge pumps boost the
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Boost Regulator Shutdown to Zero Standby Current
gate voltage 8V above a 3.3V rail, fully enhancing inexpen-
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Replacing P-Channel Switches
sive N-channels for high- or low-side switch applications.
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Notebook Computer Power Management
The LTC1163/LTC1165 are available in both an 8-pin DIP
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Palmtop Computer Power Management
and an 8-pin SOIC.
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Portable Medical Equipment
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Mixed 3.3V and 5V Supply Switching
TYPICAL APPLICATI
2-Cell Triple High-Side Switch MOSFET Switch Gate Voltage
(1.8V TO 3V)
18
+ 2-CELL
+
16
BATTERY
10F
PACK
14
RFD14N05LSM RFD14N05LSM RFD14N05LSM
12
V
S
IN1
OUT1
CONTROL
10
LTC1163
IN2
OUT2
LOGIC
LTC1165
8
OR P
IN3
OUT3
GND
6
2-CELL
2-CELL
2-CELL
4
LOAD LOAD LOAD
LTC1163 HAS NONINVERTING INPUTS
2
LTC1165 HAS INVERTING INPUTS
0
LTC1163/65 TA01
01526
3 4
SUPPLY VOLTAGE (V)
LTC1163/65 TA02
1
GATE OUTPUT VOLTAGE (V)
UO
UO
ULTC1163/LTC1165
ABSOLUTEXAI U RATI GS
Supply Voltage ......................................................... 7V
Operating Temperature Range
Any Input Voltage .......................... 7V to (GND 0.3V)
LTC1163C/LTC1165C ........................... 0C to 70C
Any Output Voltage ....................... 20V to (GND 0.3V)
Storage Temperature Range ................ 65C to 150C
Current (Any Pin)................................................. 50mA
Lead Temperature (Soldering, 10 sec)................. 300C
/O
PACKAGE RDER I FOR ATIO
ORDER PART ORDER PART
TOP VIEW TOP VIEW
NUMBER NUMBER
IN1
IN1
1
8
V
1
8
V
S
S
IN2
OUT1
LTC1163CS8
IN2
2
7
OUT1
2
7
LTC1163CN8
LTC1165CS8
IN3
3
OUT2
IN3
OUT2
6
3
6
LTC1165CN8
GND
GND 4 5
OUT3 OUT3
4 5
S8 PART MARKING
N8 PACKAGE
S8 PACKAGE
8-LEAD PLASTIC DIP
8-LEAD PLASTIC SOIC
1163
= 100C, = 150C/W
T = 100C, = 130C/W T
JMAX JA
JMAX JA 1165
V = 1.8V to 6V, T = 25C, unless otherwise noted.
ELECTRICAL CHARACTERISTICS
S A
LTC1163C/LTC1165C
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS
I Quiescent Current OFF V = 1.8V, V = V = V = V (Note 1,2) 0.01 1 A
Q S IN1 IN2 IN3 OFF
V = 3.3V, V = V = V = V (Note 1,2) 0.01 1 A
S IN1 IN2 IN3 OFF
V = 5V, V = V = V = V (Note 1,2) 0.01 1 A
S IN1 IN2 IN3 OFF
Quiescent Current ON V = 1.8V, V = V (Note 2,3) 60 120 A
S IN ON
V = 3.3V, V = V (Note 2,3) 95 200 A
S IN ON
V = 5V, V = V (Note 2,3) 180 400 A
S IN ON
V Input High Voltage 1.8V < V < 2.7V l 80% V V
INH S S
2.7V < V < 6V l 70% V V
S S
V Input Low Voltage 1.8V < V < 6V l 15% V V
INL S S
I Input Current 0V V V l 1 A
IN IN S
C Input Capacitance 5pF
IN
V V Gate Voltage Above Supply V = 1.8V, V = V (Note 2) l 3.5 4.1 6.0 V
GATE S S IN ON
V = 2V, V = V (Note 2) l 4.0 4.6 7.0 V
S IN ON
V = 2.2V, V = V (Note 2) l 4.5 5.2 8.0 V
S IN ON
V = 3.3V, V = V (Note 2) l 6.0 8.0 9.5 V
S IN ON
V = 5V, V = V (Note 2) l 5.0 9.0 13.0 V
S IN ON
t Turn-ON Time V = 3.3V, C = 1000pF
ON S GATE
Time for V > V + 1V 40 120 400 s
GATE S
Time for V > V + 2V 60 180 600 s
GATE S
V = 5V, C = 1000pF
S GATE
Time for V > V + 1V 30 95 300 s
GATE S
Time for V > V + 2V 40 130 400 s
GATE S
2
U WU
U W W W