LTC5507 100kHz to 1GHz RF Power Detector FEATURES DESCRIPTIO n Temperature Compensated Internal Schottky The LTC 5507 is an RF power detector for applications Diode RF Detector operating from 100kHz to 1000MHz. The input frequency n Wide Input Power Range: 34dBm to 14dBm range is determined by an external capacitor. A tempera- n Ultra Wide Input Frequency Range: 100kHz to ture-compensated Schottky diode peak detector and buffer 1000MHz amplifier are combined in a small 6-pin ThinSOT package. n Buffered Output The RF input voltage is peak detected using an on-chip n Wide V Range of 2.7V to 6V CC Schottky diode and external capacitor. The detected volt- n Low Operating Current: 550m A age is buffered and supplied to the V pin. A power OUT n Low Shutdown Current: <2m A saving shutdown mode reduces supply current to less TM n Low Profile (1mm) ThinSOT Package than 2m A. U , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation APPLICATIO S n Wireless Transceivers n Wireless and Cable Infrastructure n RF Power Alarm n Envelope Detector TYPICAL APPLICATIO Typical Detector Characteristics at 100kHz, 100MHz and 1000MHz 10000 T = 25C A V = 2.7V TO 6V CC LTC5507 V OUT 4 3 V V DETECTED CC OUT V BAT VOLTAGE C2 2.7V TO 6V 5 2 PCAP GND C1 1000 6 1 RF 100kHz, 100MHz RF SHDN DISABLE ENABLE IN INPUT 5507 TA01 1000MHz Figure 1. 100kHz to 1000MHz RF Power Detector 100 26 18 10 2 6 14 34 RF INPUT POWER (dBm) 5507 TA01b 5507f 1 V OUTPUT VOLTAGE (mV) OUT U ULTC5507 UUW ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART V , V to GND .................................... 0.3V to 6.5V CC OUT NUMBER RF Voltage to GND ......................... (V 1.8V) to 7V IN CC TOP VIEW SHDN Voltage to GND ................ 0.3V to (V + 0.3V) LTC5507ES6 CC SHDN 1 6 RF IN PCAP Voltage to GND ........................(V 1.8V) to 7V CC GND 2 5 PCAP I ...................................................................... 5mA V 3 4 V VOUT OUT CC S6 PART Operating Temperature Range (Note 2) .. 40 C to 85 C S6 PACKAGE MARKING Maximum Junction Temperature ......................... 125 C 6-LEAD PLASTIC SOT-23 Storage Temperature Range ................ 65 C to 150 C T = 125 C, q = 250 C/W JMAX JA LTZX Lead Temperature (Soldering, 10 sec)................. 300 C Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T = 25 C. V = 3.6V, RF Input Signal is Off, unless otherwise noted. A CC PARAMETER CONDITIONS MIN TYP MAX UNITS V Operating Voltage l 2.7 6 V CC I Shutdown Current SHDN = 0V l 2 m A VCC I Operating Current SHDN = V , I = 0mA l 0.55 0.85 mA VCC CC VOUT V V (No RF Input) R = 2k, SHDN = V , Enabled 130 250 370 mV OUT OL LOAD CC SHDN = 0V, Disabled 1 mV V Output Current V = 1.75V, V = 2.7V to 6V, D V = 10mV l 12 mA OUT OUT CC OUT V Enable Time SHDN = V , C = 33pF, R = 2k l 720 m s OUT CC LOAD LOAD V Load Capacitance (Note 4) l 33 pF OUT V Noise V = 3V, Noise BW = 1.5MHz, 50W RF Input Termination 2 mV OUT CC P-P SHDN Voltage, Chip Disabled V = 2.7V to 6V l 0.35 V CC SHDN Voltage, Chip Enabled V = 2.7V to 6V l 1.4 V CC SHDN Input Current SHDN = 3.6V l 24 40 m A RF Input Frequency Range 0.1 1000 MHz IN Max RF Input Power (Note 3) 14 dBm IN RF AC Input Resistance F = 10MHz, RF Input = 10dBm 130 W IN F = 1000MHz, RF Input = 10dBm 95 W RF Input Shunt Capacitance 1.7 pF IN Note 1: Absolute Maximum Ratings are those values beyond which the life Note 3: RF performance is tested at: 80MHz, 4dBm of a device may be impaired. Note 4: Guaranteed by design. Note 2: Specifications over the 40 C to 85 C operating temperature range are assured by design, characterization and correlation with statistical process controls. 5507f 2 U WWW