LTC5530 Precision 300MHz to 7GHz RF Detector with Shutdown and Gain Adjustment DESCRIPTIO FEATURES n Temperature Compensated Internal Schottky The LTC 5530 is an RF power detector for RF applications Diode RF Detector operating in the 300MHz to 7GHz range. A temperature n Wide Input Frequency Range: 300MHz to 7GHz* compensated Schottky diode peak detector and buffer TM n Wide Input Power Range: 32dBm to 10dBm amplifier are combined in a small ThinSOT package. The n Buffered Detector Output with External Gain Control supply voltage range is optimized for operation from a n Low Starting Voltage: 120mV 35mV for Gain = 2X single lithium-ion cell or 3xNiMH. n Wide V Range of 2.7V to 6V CC The RF input voltage is peak detected using an on-chip n Low Operating Current: 500A Schottky diode. The detected voltage is buffered and n Low Shutdown Current: <2A supplied to the V pin. The output buffer gain is set via OUT n Available in a Low Profile (1mm) SOT-23 Package external resistors. A power saving shutdown mode re- duces current to less than 2A. U APPLICATIO S The LTC5530 operates with input power levels from n 32dBm to 10dBm. 802.11a, 802.11b, 802.11g, 802.15, 802.16 n Multimode Mobile Phone Products n Optical Data Links , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. n Wireless Data Modems *Higher frequency operation is achievable with reduced performance. Consult factory for more n information. Wireless and Cable Infrastructure n RF Power Alarm n Envelope Detector TYPICAL APPLICATIO Output Voltage vs RF Input Power 3600 V = 3.6V CC 300MHz T = 25C 300MHz to 7GHz RF Power Detector 3200 A 1000MHz GAIN = 2 2000MHz 2800 33pF 3000MHz LTC5530 2400 1 4000MHz 6 RF V RF CC V IN CC 5000MHz INPUT 2000 100pF 0.1F 6000MHz 7000MHz 2 1600 5 GND V OUT 1200 R A 3 4 800 DISABLE ENABLE SHDN V M 400 5530 TA01 R B 0 32 28 24 20 16 12 8 4 0 4 8 RF INPUT POWER (dBm) 5530 TA02 5530f 1 V OUTPUT VOLTAGE (mV) OUT U ULTC5530 UUW ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART V , V , SHDN, V ...................................... 0.3V to 6.5V CC OUT M NUMBER RF Voltage ......................................(V 1.5V) to 7V IN CC TOP VIEW RF Power (RMS) .............................................. 12dBm IN LTC5530ES6 RF 1 6 V IN CC I ...................................................................... 5mA VOUT GND 2 5 V OUT Operating Temperature Range (Note 2) .. 40C to 85C SHDN 3 4 V M Maximum Junction Temperature ......................... 125C S6 PART S6 PACKAGE Storage Temperature Range ................ 65C to 150C 6-LEAD PLASTIC TSOT-23 MARKING T = 125C, = 250C/W JMAX JA Lead Temperature (Soldering, 10 sec).................. 300C LBDX Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T = 25C. V = 3.6V, SHDN = V = HI, SHDN = 0V = LO, RF Input Signal is Off, A CC CC R = R = 1k, SHDN = HI unless otherwise noted. A B PARAMETER CONDITIONS MIN TYP MAX UNITS V Operating Voltage l 2.7 6 V CC I Operating Current I = 0mA l 0.5 0.7 mA VCC VOUT I Shutdown Current SHDN = LO l 0.01 2 A VCC V (No RF Input) R = 2k l 85 100 to 140 155 mV OUT LOAD SHDN = LO 1 mV V Output Current V = 1.75V, V = 2.7V, V < 10mV l 24 mA OUT OUT CC OUT V Enable Time SHDN = LO to HI, C = 33pF, R = 2k l 820 s OUT LOAD LOAD V Bandwidth C = 33pF, R = 2k (Note 4) 2 MHz OUT LOAD LOAD V Load Capacitance (Notes 6, 7) l 33 pF OUT V Slew Rate V = 1V Step, C = 33pF, R = 2k (Note 3) 3 V/s OUT RFIN LOAD LOAD V Noise V = 3V, Noise BW = 1.5MHz, 50 RF Input Termination 1 mV OUT CC P-P V Voltage Range l0V 1.8V V M CC V Input Current l 0.5 0.5 A M SHDN Voltage LO, Chip Disabled V = 2.7V to 6V l 0.35 V CC SHDN Voltage HI, Chip Enabled V = 2.7V to 6V l 1.4 V CC SHDN Input Current SHDN = 3.6V l 22 36 A RF Input Frequency Range (Note 8) 300 to 7000 MHz IN RF Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V 32 to 10 dBm IN CC RF AC Input Resistance F = 1000MHz, Pin = 25dBm 220 IN RF Input Shunt Capacitance F = 1000MHz, Pin = 25dBm 0.65 pF IN Note 1: Absolute Maximum Ratings are those values beyond which the life equation: BW = 0.35/rise time. of a device may be impaired. Note 5: RF performance is tested at 1800MHz Note 2: Specifications over the 40C to 85C operating temperature Note 6: Guaranteed by design. range are assured by design, characterization and correlation with Note 7: Capacitive loading greater than this value may result in circuit statistical process controls. instability. Note 3: The rise time at V is measured between 1.3V and 2.3V. OUT Note 8: Higher frequency operation is achievable with reduced Note 4: Bandwidth is calculated based on the 10% to 90% rise time performance. Consult factory for more information. 5530f 2 U WWW