LTC5531 Precision 300MHz to 7GHz RF Detector with Shutdown and Offset Adjustment DESCRIPTIO FEATURES n Temperature Compensated Internal Schottky The LTC 5531 is an RF power detector for RF applications Diode RF Detector operating in the 300MHz to 7GHz range. A temperature n Wide Input Frequency Range: 300MHz to 7GHz* compensated Schottky diode peak detector and buffer TM n Wide Input Power Range: 32dBm to 10dBm amplifier are combined in a small ThinSOT package. The n Buffered Detector Output supply voltage range is optimized for operation from a n Precision V Offset Control single lithium-ion cell or 3xNiMH. OUT n Wide V Range of 2.7V to 6V CC The RF input voltage is peak detected using an on-chip n Low Operating Current: 500m A Schottky diode. The detected voltage is buffered and n Low Shutdown Current: <2m A supplied to the V pin. A power saving shutdown mode OUT n Available in a Low Profile (1mm) SOT-23 Package reduces current to less than 2m A. The initial offset voltage of 120mV 35mV can be precisely adjusted using the U APPLICATIO S V pin. OS n The LTC5531 operates with input power levels from 802.11a, 802.11b, 802.11g, 802.15, 802.16 n 32dBm to 10dBm. Multimode Mobile Phone Products n Optical Data Links , LTC and LT are registered trademarks of Linear Technology Corporation. ThinSOT is a trademark of Linear Technology Corporation. n Wireless Data Modems *Higher frequency operation is achievable with reduced performance. Consult factory for more n information. Wireless and Cable Infrastructure n RF Power Alarm n Envelope Detector TYPICAL APPLICATIO V Output Voltage vs RF Input Power OUT 3600 V = 0V OS 2000MHz 300MHz to 7GHz RF Power Detector V = 3.6V 3200 CC 1000MHz T = 25C A 2800 33pF 4000MHz LTC5531 1 6 RF 2400 V RF CC V IN CC INPUT 3000MHz 100pF 0.1F 2000 2 5 1600 GND V OUT 300MHz 1200 3 4 V OS DISABLE ENABLE SHDN V 5000MHz 800 OS REFERENCE 6000MHz 5531 TA01 400 7000MHz 0 18 14 30 26 22 10 6 2 2 6 10 RF INPUT POWER (dBm) 5531 TA02 5531f 1 V OUTPUT VOLTAGE (mV) OUT U ULTC5531 UUW ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1) ORDER PART V , V , SHDN, V .................................... 0.3V to 6.5V CC OUT OS NUMBER RF Voltage ......................................(V 1.5V) to 7V IN CC TOP VIEW RF Power (RMS) .............................................. 12dBm IN LTC5531ES6 RF 1 6 V IN CC I ...................................................................... 5mA VOUT GND 2 5 V OUT Operating Temperature Range (Note 2) .. 40 C to 85 C SHDN 3 4 V OS Maximum Junction Temperature ......................... 125 C S6 PART S6 PACKAGE Storage Temperature Range ................ 65 C to 150 C 6-LEAD PLASTIC TSOT-23 MARKING T = 125 C, q = 250 C/W JMAX JA Lead Temperature (Soldering, 10 sec).................. 300 C LTBBQ Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T = 25 C. V = 3.6V, SHDN = V = HI, SHDN = 0V = LO, RF Input Signal is Off, A CC CC V = 0V and SHDN = HI unless otherwise noted. OS PARAMETER CONDITIONS MIN TYP MAX UNITS V Operating Voltage l 2.7 6 V CC I Operating Current I = 0mA l 0.5 0.7 mA VCC VOUT I Shutdown Current SHDN = LO l 0.01 2 m A VCC V (No RF Input) R = 2k, V = 0V l 85 100 to 140 155 mV OUT LOAD OS SHDN = LO 1 mV V Output Current V = 1.75V, V = 2.7V, D V < 10mV l 24 mA OUT OUT CC OUT V Enable Time SHDN = LO to HI, C = 33pF, R = 2k l 820 m s OUT LOAD LOAD V Bandwidth C = 33pF, R = 2k (Note 4) 2 MHz OUT LOAD LOAD V Load Capacitance (Notes 6, 7) l 33 pF OUT V Slew Rate V = 1V Step, C = 33pF, R = 2k (Note 3) 3 V/m s OUT RFIN LOAD LOAD V Noise V = 3V, Noise BW = 1.5MHz, 50W RF Input Termination 1 mV OUT CC P-P V Voltage Range l01 V OS V Input Current l 0.5 0.5 m A OS SHDN Voltage, Chip Disabled V = 2.7V to 6V l 0.35 V CC SHDN Voltage, Chip Enabled V = 2.7V to 6V l 1.4 V CC SHDN Input Current SHDN = 3.6V l 22 36 m A RF Input Frequency Range (Note 8) 300 to 7000 MHz IN RF Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V 32 to 10 dBm IN CC RF AC Input Resistance F = 1000MHz, Pin = 25dBm 220 W IN RF Input Shunt Capacitance F = 1000MHz, Pin = 25dBm 0.65 pF IN Note 1: Absolute Maximum Ratings are those values beyond which the life equation: BW = 0.35/rise time. of a device may be impaired. Note 5: RF performance is tested at 1800MHz Note 2: Specifications over the 40 C to 85 C operating temperature Note 6: Guaranteed by design. range are assured by design, characterization and correlation with Note 7: Capacitive loading greater than this value may result in circuit statistical process controls. instability. Note 3: The rise time at V is measured between 1.3V and 2.3V. OUT Note 8: Higher frequency operation is achievable with reduced Note 4: Bandwidth is calculated based on the 10% to 90% rise time performance. Consult factory for more information. 5531f 2 U WWW