X-On Electronics has gained recognition as a prominent supplier of LTC5533EDE#TR RF Detector across the USA, India, Europe, Australia, and various other global locations. LTC5533EDE#TR RF Detector are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Detector, ensuring timely deliveries around the world.

LTC5533EDE#TR Analog Devices

LTC5533EDE#TR electronic component of Analog Devices
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Part No.LTC5533EDE#TR
Manufacturer: Analog Devices
Category: RF Detector
Description: RF Detector 300MHz to 11GHz Prec 2x RF Pwr Detector
Datasheet: LTC5533EDE#TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 8.9161 ea
Line Total: USD 22290.25

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
   
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We are delighted to provide the LTC5533EDE#TR from our RF Detector category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LTC5533EDE#TR and other electronic components in the RF Detector category and beyond.

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LTC5533 300MHz to 11GHz Precision Dual RF Power Detector DESCRIPTIO FEATURES Two Independent Temperature Compensated The LTC 5533 is a dual channel RF power detector for RF Schottky Diode RF Peak Detectors applications operating in the 300MHz to 11GHz range. 45dB Channel-to-Channel Isolation at 2GHz Two independent temperature compensated Schottky di- Wide Input Frequency Range: 300MHz to 11GHz* ode peak detectors and buffer amplifiers are combined in Wide Input Power Range: 32dBm to 12dBm a small 4mm 3mm DFN package. Buffered Detector Outputs with Gain of 2x The RF input voltage is peak detected using on-chip Adjustable V Starting Voltage OUT Schottky diodes. The detected voltage is buffered and Wide V Range of 2.7V to 6V CC supplied to the V pins. A power saving shutdown mode OUT Low Operating Current: <500A/Channel reduces current to less than 2A/channel. The initial Low Shutdown Current: <2A/Channel output starting voltages can be precisely adjusted using 4mm 3mm DFN Package the V pins. OS U The LTC5533 operates with input power levels from APPLICATIO S 32dBm to 12dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. PA Forward and Reverse Power Monitor All other trademarks are the property of their respective owners. *Higher frequency operation is achievable with reduced performance. Consult factory for more Dual PA Transmit Power Control information. 802.11a, b, g, 802.15, WiMAX PA Linearization Fixed Wireless Access RF Power Alarm Envelope Detector TYPICAL APPLICATIO 300MHz to 11GHz RF Power Detectors Output Voltage vs RF Input Power 3600 V = 3.6V CC LTC5533 39pF V = 0V 3200 OS 4GHz V V RF RF1 INPUT T = 25C A CC CC1 IN1 2800 100pF 1GHz V GND1 OUT1 2400 5GHz V V SHDN1 OS1 OS1 2000 39pF 500MHz V RF 1600 RF2 INPUT CC2 IN2 6GHz 0.1F 100pF 1200 V GND2 OUT2 8GHz 11GHz 800 V V SHDN2 DISABLE ENABLE OS2 OS2 10GHz 400 5533 TA01 9GHz 0 28 24 20 16 12 8 4 048 12 (EXPOSED PAD) RF INPUT POWER (dBm) 5533 TA02 5533f 1 V OUTPUT VOLTAGE (mV) OUT U ULTC5533 UUW ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO (Note 1) TOP VIEW ORDER PART V , V , V , V , V , V ....... 0.3V to 6.5V CC1 CC2 OUT1 OUT2 OS1 OS2 NUMBER V 1 12 RF RF , RF Voltage ........................(V 1.25V) to 7V CC1 IN1 IN1 IN2 CC V 2 11 GND1 OUT1 RF , RF Power (RMS) ................................. 12dBm IN1 IN2 LTC5533EDE V 3 10 SHDN1 OS1 SHDN1, SHDN2 Voltage to GND .. 0.3V to (V + 0.3V) CC 13 V 4 9 RF CC2 IN2 I , I ........................................................ 5mA VOUT1 VOUT2 V 5 8 GND2 OUT2 Operating Temperature Range (Note 2) .. 40C to 85C DFN PART V 6 7 SHDN2 OS2 Maximum Junction Temperature ......................... 125C MARKING Storage Temperature Range ................ 65C to 150C DE12 PACKAGE 12-LEAD (4mm 3mm) PLASTIC DFN 5533 T = 125C, = 40C/W JMAX JA EXPOSED PAD IS GND (PIN 13) MUST BE SOLDERED TO PCB Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T = 25C. V = 3.6V, SHDN = V = HI, SHDN = 0V = LO, RF Input Signal is Off, A CC CC V = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted. OS PARAMETER CONDITIONS MIN TYP MAX UNITS V Operating Voltage 2.7 6 V CC I Operating Current I = 0mA 0.45 0.7 mA VCC VOUT I Shutdown Current SHDN = LO 0.01 2 A VCC V Start Voltage (No RF Input) R = 2k, V = 0V 85 110 to 150 170 mV OUT LOAD OS SHDN = LO 1 mV V Output Current V = 1.75V, V = 2.7V, V < 10mV 24 mA OUT OUT CC OUT V Enable Time SHDN = LO to HI, C = 33pF, R = 2k 820 s OUT LOAD LOAD V Bandwidth C = 33pF, R = 2k (Note 4) 2 MHz OUT LOAD LOAD V Load Capacitance (Note 6) 33 pF OUT V Slew Rate V = 1V Step, C = 33pF, R = 2k (Note 3) 3 V/s OUT RFIN LOAD LOAD V Noise V = 3V, Noise BW = 1.5MHz, 50 RF Input Termination 1 mV OUT CC P-P V Shutdown Resistance Resistance Measured to Ground 280 OUT V Voltage Range 01 V OS V Input Current V = 1V 0.5 0.5 A OS OS SHDN Voltage, Chip Disabled V = 2.7V to 6V 0.35 V CC SHDN Voltage, Chip Enabled V = 2.7V to 6V 1.4 V CC SHDN Input Current SHDN = 3.6V 22 36 A RF Input Frequency Range 300 to 11000 MHz IN RF Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V 32 to 12 dBm IN CC RF AC Input Resistance f = 1000MHz, Pin = 25dBm 220 IN RF Input Shunt Capacitance f = 1000MHz, Pin = 25dBm 0.65 pF IN Channel to Channel Isolation f = 2GHz 45 dB Note 1: Absolute Maximum Ratings are those values beyond which the life Note 3: The rise time at V is measured between 1.3V and 2.3V. OUT of a device may be impaired. Note 4: Bandwidth is calculated based on the 10% to 90% rise time Note 2: Specifications over the 40C to 85C operating temperature equation: BW = 0.35/rise time. range are assured by design, characterization and correlation with Note 5: RF performance is production tested at 1800MHz statistical process controls. Note 6: Guaranteed by design. 5533f 2 U WWW

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ANALOG DEVICES
Analog Devices Hittite
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ANALOG DEVICES (MAXIM INTEGRATED)
ANALOG DEVICES (TRINAMIC)
Analog Devices / Hittite
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Analog Devices Inc
Analog Devices Inc.
Analog Devices Inc./Maxim Integrated
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DA4
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HANSCHIP semiconductor
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MAXIM-DALLAS
MX4
Technology
Trinamic
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Trinamic Motion Control GmbH

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