X-On Electronics has gained recognition as a prominent supplier of LTC5535ES6#TRM RF Detector across the USA, India, Europe, Australia, and various other global locations. LTC5535ES6#TRM RF Detector are a product manufactured by Analog Devices. We provide cost-effective solutions for RF Detector, ensuring timely deliveries around the world.

LTC5535ES6#TRM Analog Devices

LTC5535ES6#TRM electronic component of Analog Devices
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Part No.LTC5535ES6#TRM
Manufacturer: Analog Devices
Category: RF Detector
Description: RF Detector RF Power Detector w/ 12MHz BW
Datasheet: LTC5535ES6#TRM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 11.5313 ea
Line Total: USD 5765.65 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
   
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We are delighted to provide the LTC5535ES6#TRM from our RF Detector category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LTC5535ES6#TRM and other electronic components in the RF Detector category and beyond.

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LTC5535 Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth FEATURES DESCRIPTIO Temperature Compensated Internal Schottky The LTC 5535 is an RF power detector for RF applications Diode RF Detector operating in the 600MHz to 7GHz range. A temperature Wide Input Frequency Range: 600MHz to 7GHz* compensated Schottky diode peak detector and output TM Wide Input Power Range: 32dBm to 10dBm amplifier are combined in a small ThinSOT package. The External Gain Control supply voltage range is optimized for operation from a Precision V Offset Control single cell lithium-ion or three cell NiMH battery. OUT Low Starting Voltage: 200mV for Gain = 2 The RF input voltage is peak detected using an on-chip Wide V Range of 2.7V to 5.5V CC Schottky diode. The detected voltage is buffered and Low Operating Current: 2mA supplied to the V pin. OUT Available in a Low Profile (1mm) SOT-23 Package The LTC5535 output amplifier gain is set via external U resistors. The initial starting voltage of 200mV can be APPLICATIO S precisely adjusted using the V pin. OS 802.11a, 802.11b, 802.11g, 802.15, 802.16 The LTC5535 operates with input power levels from Multimode Mobile Phone Products 32dBm to 10dBm. The 12MHz baseband bandwidth is Optical Data Links much higher than that of previous Schottky detector Wireless Data Modems products. Wireless and Cable Infrastructure , LTC and LT are registered trademarks of Linear Technology Corporation. RF Power Alarm ThinSOT is a trademark of Linear Technology Corporation. *Higher frequency operation is achievable with reduced performance. Consult factory for more Envelope Detector information. TYPICAL APPLICATIO Output Voltage vs RF Input Power 3600 600MHz to 7GHz RF Power Detector V = 3.6V CC T = 25C 3200 A GAIN = 2 2GHz 2800 V = 0V OS 33pF 600MHz LTC5535 1 2400 6 1GHz RF V RF CC V IN CC INPUT 5GHz 2000 100pF 0.1F 6GHz 2 5 1600 GND V OUT 7GHz 1200 R A 4GHz 3 4 V OS 800 V V OS M REFERENCE 5535 TA01 R 400 B 0 32 28 24 20 16 12 8 4 0 48 12 RF INPUT POWER (dBm) 5535 TA02 5535f 1 V OUTPUT VOLTAGE (mV) OUT U ULTC5535 UUW PACKAGE/ORDER I FOR ATIO ABSOLUTE AXI U RATI GS (Note 1) ORDER PART V , V , V , V .............................................. 0.3V to 6V CC OUT M OS NUMBER RF Voltage ...................................(V 1.5V) to 6.5V TOP VIEW IN CC RF Power (RMS) .............................................. 12dBm IN LTC5535ES6 RF 1 6 V IN CC I .................................................................... 25mA VOUT GND 2 5 V OUT Operating Temperature Range (Note 2) .. 40C to 85C V 3 4 V OS M Maximum Junction Temperature ......................... 125C S6 PART S6 PACKAGE Storage Temperature Range ................ 65C to 150C 6-LEAD PLASTIC TSOT-23 MARKING T = 125C, = 250C/W Lead Temperature (Soldering, 10 sec).................. 300C JMAX JA LBHK Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T = 25C. V = 3.6V, RF Input Signal is Off, R = R = 500, V = 0V unless A CC A B OS otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS V Operating Voltage 2.7 5.5 V CC I Operating Current I = 0mA 2 3.5 mA VCC VOUT V V (No RF Input) 150 180 to 220 250 mV OUT OL V Output Current V = 1.75V, V = 2.7V to 5.5V, V < 10mV 10 20 mA OUT OUT CC OUT V Bandwidth C = 33pF, R = 2k, P = 10dBm (Note 4) 12 MHz OUT LOAD LOAD IN V Load Capacitance (Note 6) 33 pF OUT V Slew Rate V = 1V Step, C = 33pF (Note 3) 50 V/s OUT RFIN LOAD V Noise V = 3V, Noise BW = 1.5MHz, 50 RF Input Termination, 1 mV OUT CC P-P 50 AC Output Termination V Voltage Range 01 V OS V Input Current V = 1V 0.5 0.5 A OS OS V Voltage Range 0V -1. 8 V M CC V Input Current V = 3.6V 0.5 0.5 A M M RF Input Frequency Range 600 to 7000 MHz IN RF Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V 32 to 10 dBm IN CC RF AC Input Resistance F = 1000MHz, Pin = 25dBm 220 IN RF Input Shunt Capacitance F = 1000MHz, Pin = 25dBm 0.65 pF IN Note 1: Absolute Maximum Ratings are those values beyond which the life Note 3: The rise time at V is measured between 1.3V and 2.3V. OUT of a device may be impaired. Note 4: See Table 1 in Applications Information section. Note 2: Specifications over the 40C to 85C operating temperature Note 5: RF performance is tested at 1800MHz range are assured by design, characterization and correlation with Note 6: Guaranteed by design. statistical process controls. 5535f 2 U WWW

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
ANALOG DEVICES
Analog Devices Hittite
ANALOG DEVICES (LINEAR TECHNOLOGY)
ANALOG DEVICES (MAXIM INTEGRATED)
ANALOG DEVICES (TRINAMIC)
Analog Devices / Hittite
Analog Devices / Linear Technology
Analog Devices Inc
Analog Devices Inc.
Analog Devices Inc./Maxim Integrated
Analog Devices, Inc.
DA4
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Dallas Semiconductor (VA)
HANSCHIP semiconductor
LINEAR
LINEAR TECH
Linear Technology
Linear Technology (part of ADI)
LT
LT4
MAXIM
Maxim Integrated
MAXIM INTEGRATED / ANALOG DEVICES
Maxim Integrated Products
MAXIM-DALLAS
MX4
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Trinamic
TRINAMIC / ANALOG DEVICES
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