MAX11014/MAX11015 19-3985 Rev 3 11/08 Automatic RF MESFET Amplifier Drain-Current Controllers General Description Features Dual Drain-Current-Sense Gain Amplifier The MAX11014/MAX11015 set and control bias condi- tions for dual MESFET power devices found in point-to- Preset Gain of 4 point communication and other microwave base 0.5% Accuracy for Sense Voltages Between stations. The MAX11014 integrates complete dual ana- 75mV and 625mV (MAX11014) log closed-loop drain-current controllers for Class A Common-Mode Sense-Resistor Voltage Range MESFET amplifier operation, while the MAX11015 tar- gets Class AB operation. Both devices integrate SRAM 0.5V to 11V (MAX11014) lookup tables (LUTs) that can be used to store temper- 5V to 32V (MAX11015) ature and drain-current compensation data. Low-Noise Output GATE Bias with 10mA GATE Each device includes dual high-side current-sense Drive amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the 0 to Fast Clamp and Power-On Reset 625mV range. External diode-connected transistors mon- 12-Bit DAC Controls MESFET GATE Voltage itor the MESFET temperatures while an internal tempera- ture sensor measures the local die temperature of the Internal Temperature Sensor/Dual Remote Diode MAX11014/MAX11015. The internal DAC sets the volt- Temperature Sensors ages across the current-sense resistors by controlling Internal 12-Bit ADC Measures Temperature and the GATE voltages. The internal 12-bit SAR ADC digitizes Voltage internal and external temperature, internal DAC voltages, current-sense amplifier voltages, and external GATE volt- Pin-Selectable Serial Interface ages. Two of the 11 ADC channels are available as gen- 2 3.4MHz I C-Compatible Interface eral-purpose analog inputs for analog system monitoring. 20MHz SPI-/MICROWIRE-Compatible Interface The MAX11014s gate-drive amplifier functions as an integrator for the Class A drain-current control loop while the MAX11015s gate-drive amplifier functions with a gain of -2 for Class AB applications. The current- Ordering Information limited gate-drive amplifier can be fast clamped to an PART PIN-PACKAGE AMPLIFIER external voltage independent of the digital input from the serial interface. Both the MAX11014 and the MAX11014BGTM+ 48 Thin QFN-EP** Class A MAX11015 include self-calibration modes to minimize MAX11015BGTM+* 48 Thin QFN-EP** Class AB error over time, temperature, and supply voltage. + Denotes a lead-free package. The MAX11014/MAX11015 feature an internal reference *Future productcontact factory for availability. and can operate from separate ADC and DAC external **EP = Exposed pad. Note: All devices are specified over the -40C to +105C operating references. The internal reference provides a well-regu- temperature range. lated, low-noise +2.5V reference for the ADC, DAC, and temperature sensors. These integrated circuits operate from a 4-wire 20MHz SPI-/MICROWIRE-compatible Pin Configuration and Typical Operating Circuit appear at end 2 or 3.4MHz I C-compatible serial interface (pin-selec- of data sheet. table). Both devices operate from a +4.75V to +5.25V analog supply (2.8mA typical supply current), a +2.7V Applications to +5.25V digital supply (1.5mA typical supply current), and a -4.5V to -5.5V negative supply (1.1mA supply Cellular Base-Station RF MESFET Bias Controllers current). The MAX11014/MAX11015 are available in a Point-to-Point or Point-to-Multipoint Links 48-pin thin QFN package specified over the -40C to +105C temperature range. Industrial Process Control SPI is a trademark of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor Corp. Maxim Integrated Products 1 For pricing delivery, and ordering information please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLEAutomatic RF MESFET Amplifier Drain-Current Controllers ABSOLUTE MAXIMUM RATINGS AV to AGND .........................................................-0.3V to +6V PGAOUT1, PGAOUT2 to AGND ..............-0.3V to (AV + 0.3V) DD DD DV to DGND.........................................................-0.3V to +6V SCLK/SCL, DIN/SDA, CS/A0, N.C./A2, CNVST, OPSAFE1, DD AGND to DGND.....................................................-0.3V to +0.3V OPSAFE2 to DGND.............................-0.3V to (DV + 0.3V) DD AV to AGND...........................................................-0.3V to -6V DOUT/A1, SPI/I2C, ALARM, BUSY SS RCS1+, RCS1-, RCS2+, RCS2- to GATEV to DGND ..............................................-0.3V to (DV + 0.3V) SS DD (MAX11014) ........................................................-0.3V to +13V Maximum Current into Any Pin............................................50mA RCS1+, RCS1-, RCS2+, RCS2- to AGND Continuous Power Dissipation (T = +70C) A (MAX11015) ........................................................-0.3V to +34V 48-Pin Thin QFN (derate 27.0mW/C RCS1- to RCS1+.......................................................-6V to +0.3V above +70C)..........................................................2162.2mW RCS2- to RCS2+.......................................................-6V to +0.3V Operating Temperature Range .........................-40C to +105C GATEV to AGND...................................................+0.3V to -6V Storage Temperature Range ...............................-60C to 150C SS GATE1, GATE2 to AGND .....(GATEV - 0.3V) to (AV + 0.3V) Junction Temperature......................................................+150C SS DD DV to AV ..........................................-0.3V to (AV + 0.3V) Lead Temperature (soldering, 10s) .................................+300C DD DD DD All Other Analog Inputs to AGND ............-0.3V to (AV + 0.3V) DD Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = V = -5.5V to -4.75V, V = +4.75V to +5.25V, V = +2.7V to V , external V = +2.5V, external GATEVSS AVSS AVDD DVDD AVDD REFADC V = +2.5V, C = C = 0.1F, V = V = 0, V = V = +5V, C = C = 1nF, C = REFDAC REFADC REFDAC OPSAFE1 OPSAFE2 RCS1+ RCS2+ FILT1 FILT3 FILT2 C = 1nF, V = V = 0, V = V = 0, V = V = -5V, T = T to T , unless otherwise noted. FILT4 AGND DGND ADCIN0 ADCIN1 ACLAMP1 ACLAMP2 J MIN MAX All typical values are at T = +25C.) J PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS CURRENT-SENSE AMPLIFIER (Note 1) MAX11014 0.5 11.0 Common-Mode Input Voltage V V RCS + Range MAX11015 5 32 0.5V < V < 11V for the MAX11014 90 RCS + Common-Mode Rejection Ratio CMRR dB 5V < V < 32V for the MAX11015 90 RCS + I 200 RCS+ V < 100mV over the common-mode SENSE Input-Bias Current A range I 2 RCS- Full-Scale Sense Voltage V V = V - V 625 mV SENSE SENSE RCS + RCS - To within 0.5% accuracy 75 625 Sense Voltage Range To within 2% accuracy 20 625 mV To within 20% accuracy 2 625 Total Current Set Error V = 75mV 0.1 0.5 % SENSE Current-Sense Settling Time t Settles to within 0.5% of final value < 25 s HSCS Settles to within 0.5% accuracy, from Saturation Recovery Time < 45 s V = 1.875V SENSE CLASS AB INPUT CHANNEL Untrimmed Offset 19 Bits o Offset Temperature Coefficient 0 Bits/ C Gain 4 Gain Error 0.1 % 2 MAX11014/MAX11015