X-On Electronics has gained recognition as a prominent supplier of MAX14921EVKIT# Power Management IC Development Tools across the USA, India, Europe, Australia, and various other global locations. MAX14921EVKIT# Power Management IC Development Tools are a product manufactured by Analog Devices. We provide cost-effective solutions for Power Management IC Development Tools, ensuring timely deliveries around the world.

MAX14921EVKIT# Analog Devices

MAX14921EVKIT# electronic component of Analog Devices
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Part No.MAX14921EVKIT#
Manufacturer: Analog Devices
Category: Power Management IC Development Tools
Description: Power Management IC Development Tools EV Kit for High-Accuracy 12-16-Cell Measurement AFEs
Datasheet: MAX14921EVKIT# Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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EVALUATION KIT AVAILABLE MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs General Description Benefits and Features The MAX14920/MAX14921 battery measurement analog S High Accuracy front-end devices accurately sample cell voltages and 0.5mV (max) Cell Voltage provide level shifting for primary/secondary battery packs Simultaneous Cell Voltage Sampling up to 16 cells/+65V (max). The MAX14920 monitors up Self-Calibration to 12 cells, while the MAX14921 monitors up to 16 cells. S Integrated Diagnostics Both devices simultaneously sample all cell voltages, allowing accurate state-of-charge and source-resistance Open-Wire and Short Fault Detection determination. All cell voltages are level shifted to ground Undervoltage/Overvoltage Warning reference with unity gain, simplifying external ADC data Thermal Shutdown conversion. S High Flexibility The devices have a low-noise, low-offset amplifier that SPI Interface buffers differential voltages of up to +5V, allowing moni- toring of all common lithium-ion (Li+) cell technologies. 12-Cell and 16-Cell Versions The resulting cell voltage error is Q0.5mV. +6V Minimum (3 Cells) Operation The devices high accuracy make them ideal for monitoring +0.5V to +4.5V Cell Voltage Range cell chemistries with very flat discharge curves, such as Integrated Cell-Balancing FET Drivers lithium-metal phosphate. Integrated 5V LDO Passive-cell balancing is supported by external FET S Low Power drivers. Integrated diagnostics in the devices allow 1A Shutdown Mode open-wire detection and undervoltage/overvoltage 1A/10A Cell Current Draw alarms. The devices are controlled by a daisy-chainable SPI interface. The MAX14920 is available in a 64-pin (10mm x 10mm) TQFP package with an exposed pad. The MAX14921 is Ordering Information appears at end of data sheet. available in an 80-pin (12mm x 12mm) TQFP package. Functional Diagram appears at end of data sheet. Both devices are specified over the -40C to +85C extended temperature range. For related parts and recommended products to use with this part, refer to www.maximintegrated.com/MAX14920.related. Applications Industrial Battery Backup Systems Telecom Battery Backup Systems Energy Storage Packs e-Transportation Energy Packs For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maximintegrated.com. 19-6496 Rev 0 10/12MAX14920/MAX14921 High-Accuracy 12-/16-Cell Measurement AFEs ABSOLUTE MAXIMUM RATINGS (All voltages referenced to AGND.) BA1 to AGND ......................................... -0.3V to (V + 0.3V) CV1 V to AGND ..........................................................-0.3V to +70V BA2BA12 to P LDOIN to AGND ............................... (V - 0.3V) to (V + 0.3V) AGND ........(V - 0.3V) to min((V + 0.3V) or +6V) A P CV(n* - 1) CVn* V to AGND ............................................................-0.3V to +6V BA2BA16 to AGND A CV0, DGND to AGND ..........................................-0.3V to +0.3V (MAX14921 only) ...........................(V - 0.3V) to min CV(m** - 1) SCLK, SDI, CS, EN ..................................................-0.3V to +6V ((V + 0.3V) or +6V) CVm** SDO, SAMPL ............................................... -0.3V to (V + 0.3V) AOUT, T1, T2, T3 to AGND .........................-0.3V to (V + 0.3V) L A CV1 to AGND ..........................................................-0.3V to +6V Continuous Power Dissipation (T = +70C) A CV2CV12 to AGND ..............(V - 0.3V) to (V + 0.3V) 64-Pin TQFP-EP (derate 31.3mW/C above +70C)...2508mW (n* - 1) CV P CT1CT12 to AGND .................... -0.3V to (V V + 0.3V) 80-Pin TQFP (derate 23.3mW/C above +70C) ........1860mW CV1 CV12 CB2CB12 to AGND .......................-0.3V to (V + 0.3V) Operating Temperature Range .......................... -40NC to +85C CV(n* - 1) CV2CV16 to AGND Maximum Junction Temperature .....................................+150C (MAX14921 only) .............. (V - 0.3V) to (V + 0.3V) Storage Temperature Range ............................ -65NC to +150C CV(m** - 1) P CT1CT16 to AGND Lead Temperature (soldering, 10s) ................................+300C (MAX14921 only) ......................-0.3V to (V V + 0.3V) Soldering Temperature (reflow) ......................................+260C CV1 CV16 CB2CB16 to AGND *n = 212 (MAX14921 only) .......................-0.3V to (V + 0.3V) **m = 216 CV(m** - 1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional opera- tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PACKAGE THERMAL CHARACTERISTICS (Note 1) Junction-to-Ambient Thermal Resistance (q ) Junction-to-Case Thermal Resistance (q ) JA JC 64-Pin TQFP-EP..........................................................31.9C/W 64-Pin TQFP-EP...............................................................1C/W 80-Pin TQFP ..................................................................43C/W 80-Pin TQFP ....................................................................8C/W Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. DC ELECTRICAL CHARACTERISTICS (V = +65V, DGND = AGND, V = V = +3.3V, V = +5V, C = 1FF, T = -40C to +85C, unless otherwise noted. Typical P L EN A SAMPLE A values are at T = +25C.) (Note 2) A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLIES V Supply Voltage V +6 +65 V P P I EN = low or LOPW = 1 1 P OFF V Supply Current FA P I EN = high 65 150 P ON LDOIN Supply Voltage V +6 +65 V LDOIN I EN = low, I = 0A 75 125 LDOIN OFF A LDOIN Supply Current FA I EN = high, I = 0A 350 500 LDOIN ON A V Analog Supply Voltage V V supply externally, V = V +4.75 +5 +5.25 V A A A A LDOIN I EN = low, V = V 50 75 A OFF A LDOIN V Analog Supply Current FA A I EN = high, V = V 350 450 A ON A LDOIN V Supply Voltage V +1.62 +5.5 V L L All logic inputs static, held at logic-low V Supply Current I 2.5 5 FA L L or logic-high Maxim Integrated 2

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