MAX1686/MAX1686H 19-1376 Rev 1 12/98 3V to 5V Regulating Charge Pumps for SIM Cards General Description Features The MAX1686 provides power for dual-voltage sub- 2.7V to 4.2V Input Range scriber ID module (SIM) cards in portable applications 12mA min Charge-Pump Output Current such as GSM cellular phones. Designed to reside in the portable unit (cellular phone handset), the 1MHz charge 45A Quiescent Supply Current pump converts a 2.7V to 4.2V input to regulated 5V out- 0.1A Supply Current in Shutdown Mode put. The MAX1686H has a nominal output voltage of 5.0V, while the MAX1686 is set to 4.75V to reduce SIM- 5.0V Regulated Charge-Pump Output (MAX1686H) card current drain. The charge pump has only 45A qui- 4.75V Regulated Charge-Pump Output (MAX1686) escent supply current, which reduces to 3A when a Input-Output Shorting Switch for 3V Cards 3V-capable SIM card is being powered and the charge pump is disabled. An internal input/output shorting Small External Components switch provides power for 3V SIM cards. (Uses a 0.047F, 0.1F, and a 2.2F Capacitor) The MAX1686/MAX1686H require only three external Output Driven to Ground in Shutdown Mode capacitors around their space-saving, thin (1mm) 8-pin MAX packages. Super-Small 8-Pin MAX Package Soft-Start and Short-Circuit Protection Applications GSM Cellular Phones PCS Phones Ordering Information Portable POS Terminals PART TEMP. RANGE PIN-PACKAGE Personal Communicators MAX1686EUA -40C to +85C 8 MAX MAX1686HEUA -40C to +85C 8 MAX Typical Operating Circuit Pin Configuration TOP VIEW C X INPUT OUTPUT CXN CXP 2.7V TO 4.2V V OR 5V/20mA IN IN OUT 3/5 1 8 OUT C C IN OUT MAX1686 SHDN 2 7 CXP MAX1686H MAX1686 SHDN IN 3 6 CXN MAX1686H GND 4 5 PGND 3/5 MAX GND PGND Maxim Integrated Products 1 For free samples & the latest literature: 3V to 5V Regulating Charge Pumps for SIM Cards ABSOLUTE MAXIMUM RATINGS Continuous Power Dissipation (T = +70C ) IN, OUT, SHDN, 3/5 to GND.....................................-0.3V to +6V A CXP to GND..............................................-0.3V to (V + 0.3V) 8-Pin MAX (derate 4.1mW/C above +70C) .............330mW OUT Operating Temperature Range CXN to GND ................................................-0.3V to (V + 0.3V) IN PGND to GND ......................................................-0.3V to + 0.3V MAX1686EUA/MAX1686HEUA........................-40C to +85C Junction Temperature......................................................+150C OUT Short Circuit to GND ..........................................Continuous IN-to-OUT Current...............................................................50mA Storage Temperature Range .............................-65C to +165C Lead Temperature (soldering, 10sec) .............................+300C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = V = 3.3V, 3/5 = GND, C = 0.22F, C = 10F (see Applications Information section to use smaller capacitors), IN SHDN X OUT T = T to T , unless otherwise noted. Typical values are at T = +25C.) (Note 1) A MIN MAX A PARAMETER CONDITIONS MIN TYP MAX UNITS Input Voltage Range 2.7 4.2 V Input Undervoltage-Lockout 0.8 1.2 1.6 V Threshold Voltage T = +25C 45 100 A Charge pump enabled, no load, 3/5 = GND Quiescent Supply Current T = -40C to +85C 150 A A Charge pump disabled, no load, 3/5 = IN 310 Shutdown Supply Current V = 3.6V, SHDN = GND 0.1 5 A IN MAX1686 4.55 4.75 5.25 V = 2.7V to 4.2V, IN load = 0 to 12mA OUT Output Voltage MAX1686H 4.75 5.00 5.25 V V 3/5 = IN IN IN-to-OUT Switch On-Resistance V = V = 3.0V 2.5 5 3/5 IN OUT Discharge Switch On-Resistance 3/5 = GND or IN, SHDN = GND 80 200 OUT Short-Circuit Current 3/5 = GND or IN 20 100 200 mA Logic Input Low Voltage SHDN, 3/5 0.5 V 0.3 V V IN IN Logic Input High Voltage SHDN, 3/5 0.7 V 0.5 V V IN IN Logic Input Leakage Current 0.1 1 A SHDN, 3/5 = GND or IN T = +25C 800 1000 1200 A Charge-Pump Frequency kHz T = -40C to +85C 700 1300 A Note 1: Electrical specifications are measured by pulse testing and are guaranteed for a junction temperature within the operating temperature range, unless otherwise noted. Limits are 100% production tested at T = +25C. Limits over the entire operat- A ing temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods and are not pro- duction tested. 2 MAX1686/MAX1686H