MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer General Description Features The MAX19997A dual downconversion mixer is a versa- 1800MHz to 2900MHz RF Frequency Range tile, highly integrated diversity downconverter that pro- 1950MHz to 3400MHz LO Frequency Range vides high linearity and low noise figure for a multitude of 1800MHz to 2900MHz base-station applications. The 50MHz to 550MHz IF Frequency Range MAX19997A fully supports both low- and high-side LO Supports Both Low-Side and High-Side LO injection architectures for the 2300MHz to 2900MHz Injection WiMAX, LTE, WCS, and MMDS bands, providing 8.7dB gain, +24dBm input IP3, and 10.3dB NF in the 8.7dB Conversion Gain low-side configuration, and 8.7dB gain, +24dBm input +24dBm Input IP3 IP3, and 10.4dB NF in the high-side configuration. High- 10.3dB Noise Figure side LO injection architectures can be further extended down to 1800MHz with the addition of one tuning ele- +11.3dBm Input 1dB Compression Point ment (a shunt inductor) on each RF port. 70dBc Typical 2 x 2 Spurious Rejection at The device integrates baluns in the RF and LO ports, P = -10dBm RF an LO buffer, two double-balanced mixers, and a pair of differential IF output amplifiers. The MAX19997A Dual Channels Ideal for Diversity Receiver requires a typical LO drive of 0dBm and a supply cur- Applications rent guaranteed below 420mA to achieve the targeted Integrated LO Buffer linearity performance. Integrated LO and RF Baluns for Single-Ended The MAX19997A is available in a compact 6mm x 6mm, Inputs 36-pin TQFN lead-free package with an exposed pad. Electrical performance is guaranteed over the extended Low -3dBm to +3dBm LO Drive temperature range, from T = -40C to +100C. C Pin Compatible with the MAX19999 3000MHz to Applications 4000MHz Mixer 2.3GHz WCS Base Stations Pin Similar to the MAX9995 and MAX19995/ MAX19995A 1700MHz to 2200MHz Mixers and the 2.5GHz WiMAX and LTE Base Stations MAX9985 and MAX19985A 700MHz to 1000MHz 2.7GHz MMDS Base Stations Mixers UMTS/WCDMA and cdma2000 3G Base 42dB Channel-to-Channel Isolation Stations Single 5.0V or 3.3V Supply PCS1900 and EDGE Base Stations External Current-Setting Resistors Provide Option PHS/PAS Base Stations for Operating Device in Reduced-Power/Reduced- Fixed Broadband Wireless Access Performance Mode Wireless Local Loop Private Mobile Radios Ordering Information Military Systems PART TEMP RANGE PIN-PACKAGE MAX19997AETX+ -40C to +100C 36 TQFN-EP* MAX19997AETX+T -40C to +100C 36 TQFN-EP* +Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed pad. T = Tape and reel. WiMAX is a trademark of WiMAX Forum. Pin Configuration/Functional Block Diagram appears at cdma2000 is a registered trademark of Telecommunications Industry Association. end of data sheet. For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maximintegrated.com. 19-4288 Rev 4 1/13MAX19997A Dual, SiGe High-Linearity, 1800MHz to 2900MHz Downconversion Mixer with LO Buffer ABSOLUTE MAXIMUM RATINGS V to GND...........................................................-0.3V to +5.5V Operating Case Temperature Range CC RF , LO to GND.....................................................-0.3V to +0.3V (Note 4) .................................................T = -40C to +100C C IFM , IFD , IFM SET, IFD SET, LO ADJ M, Junction Temperature......................................................+150C LO ADJ D to GND.................................-0.3V to (V + 0.3V) Storage Temperature Range .............................-65C to +150C CC RF , LO Input Power ......................................................+15dBm Lead Temperature (soldering, 10s) .................................+300C RF , LO Current (RF and LO is DC Soldering Temperature (reflow) .......................................+260C shorted to GND through balun)....................................50mA Continuous Power Dissipation (Note 1) ..............................6.5W PACKAGE THERMAL CHARACTERISTICS Junction-to-Ambient Thermal Resistance ( ) Junction-to-Case Thermal Resistance ( ) JA JC (Notes 2, 3)...................................................................38C/W (Notes 1, 3)..................................................................7.4C/W Junction-to-Board Thermal Resistance ( )................12.2C/W JB Note 1: Based on junction temperature T = T + ( x V x I ). This formula can be used when the temperature of the exposed J C JC CC CC pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction temperature must not exceed +150C. Note 2: Junction temperature T = T + ( x V x I ). This formula can be used when the ambient temperature of the PCB is J A JA CC CC known. The junction temperature must not exceed +150C. Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB. C A Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. +5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS (Typical Application Circuit optimized for the standard RF band (see Table 1), no input RF or LO signals applied, V = 4.75V to CC 5.25V, T = -40C to +85C. Typical values are at V = 5.0V, T = +25C, unless otherwise noted. R1, R4 = 750, R2, R5 = 698.) C C CC PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Supply Voltage V 4.75 5.25 V CC V = 5.0V 388 420 CC Total Supply Current I mA CC V = 5.25V 390.4 CC V (Pin 4) Supply Current CC V = 5.25V 2.5 mA CC (Main and Diversity Paths) V (Pin 10) Supply Current CC V = 5.25V 8.9 mA CC (Diversity Path) V (Pin 16) Supply Current CC V = 5.25V 109.3 mA CC (Diversity Path) V (Pin 21) Supply Current CC V = 5.25V 28.3 mA CC (Main and Diversity Paths) V (Pin 30) Supply Current CC V = 5.25V 109.3 mA CC (Main Path) V (Pin 36) Supply Current CC V = 5.25V 8.9 mA CC (Main Path) IFM Bias Supply Current (Main Total bias feeding IFM- and IFM+ through 61.6 mA Path) R3, L1 and L2 V = 5.25V CC IFD Bias Supply Current Total bias feeding IFD+ and IFD- through 61.6 mA (Diversity Path) R6, L3 and L4 V = 5.25V CC 2 Maxim Integrated