MAX2016 19-3404 Rev 1 10/06 LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements General Description Features The MAX2016 dual logarithmic detector/controller is a Complete Gain and VSWR Detector/Controller fully integrated system designed for measuring and Dual-Channel RF Power Detector/Controller comparing power, gain/loss, and voltage standing-wave Low-Frequency to 2.5GHz Frequency Range ratio (VSWR) of two incoming RF signals. An internal broadband impedance match on the two differential RF Exceptional Accuracy Over Temperature input ports allows for the simultaneous monitoring of sig- High 80dB Dynamic Range nals ranging from low frequency to 2.5GHz. 2.7V to 5.25V Supply Voltage Range* The MAX2016 uses a pair of logarithmic amplifiers to detect and compare the power levels of two RF input Internal 2V Reference signals. The device internally subtracts one power level Scaling Stable Over Supply and Temperature from the other to provide a DC output voltage that is pro- Variations portional to the power difference (gain). The MAX2016 Controller Mode with Error Output can also measure the return loss/VSWR of an RF signal by monitoring the incident and reflected power levels Available in 5mm x 5mm, 28-Pin Thin QFN associated with any given load. A window detector is Package easily implemented by using the on-chip comparators, *See Power-Supply Connection section. OR gate, and 2V reference. This combination of circuitry provides an automatic indication of when the measured Ordering Information gain is outside a programmable range. Alarm monitoring PIN- PKG can thus be implemented for detecting high-VSWR PART TEMP RANGE PACKAGE CODE states (such as open or shorted loads). The MAX2016 operates from a single +2.7V to +5.25V* 28 Thin Q FN- E P *, MAX2016ETI -40C to +85C T2855-3 b ulk power supply and is specified over the extended -40C to +85C temperature range. The MAX2016 is available 28 Thin Q FN- E P *, in a space-saving, 5mm x 5mm, 28-pin thin QFN. MAX2016ETI-T -40C to +85C T2855-3 T/R Applications 28 Thin Q FN- E P *, MAX2016ETI+D -40C to +85C T2855-3 l ead fr ee, bul k Return Loss/VSWR Measurements 28 Thin Q FN- E P *, Dual-Channel RF Power Measurements MAX2016ETI+TD -40C to +85C T2855-3 l ead free, T/R Dual-Channel Precision AGC/RF Power Control *EP = Exposed pad. Log Ratio Function for RF Signals +Indicates lead-free package. D = Dry pack. Remote System Monitoring and Diagnostics Cellular Base Station, Microwave Link, Radar, Pin Configuration and other Military Applications RF/IF Power Amplifier (PA) Linearization 28 27 26 25 24 23 22 FA1 1 21 FB1 V 2 20 V CC CC RFINA+ 3 19 RFINB+ MAX2016 RFINA- 4 18 RFINB- GND 5 17 GND COUTH 6 16 COUTL CSETH 7 15 CSETL 8 9 10 11 12 13 14 Typical Application Circuit appears at end of data sheet. THIN QFN Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE COR FA2 V OUTA CC SETD SETA OUTD REF V SETB CC OUTB FV2 FV1 FB2LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements ABSOLUTE MAXIMUM RATINGS V to GND.........................................................-0.3V to +5.25V Operating Temperature Range ...........................-40C to +85C CC Input Power Differential (RFIN +, RFIN -)......................+23dBm Junction Temperature......................................................+150C Input Power Single Ended (RFIN + or RFIN -) .............+19dBm Storage Temperature Range .............................-65C to +150C All Other Pins to GND.................................-0.3V to (V + 0.3V) Lead Temperature (soldering, 10s) .................................+300C CC Continuous Power Dissipation (T = +70C) A 28-Pin, 5mm x 5mm Thin QFN (derate 35.7mW/C above +70C)..................................................................2.8W Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (V = +2.7V to +3.6V, R = R = R = 0, T = -40C to +85C, unless otherwise noted. Typical values are at V = +3.3V, CC 1 2 3 A CC CSETL = CSETH = V , 50 RF system, T = +25C, unless otherwise noted.) (Note 1) CC A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLY V R = 0 2.7 3.3 3.6 S 6 Supply Voltage V V R = 37.4 4.75 5 5.25 S 6 Total Supply Current I 43 55 mA CC Measured in each pin 2 and pin 20 16 Supply Current Measured in pin 9 2 mA Measured in pin 12 9 INPUT INTERFACE Input Impedance Differential impedance at RFINA and RFINB 50 Resistance at SETD 20 Input Resistance R k Resistance at SETA and SETB 40 DETECTOR OUTPUT Source Current Measured at OUTA, OUTB, and OUTD 4 mA Sink Current Measured at OUTA, OUTB, and OUTD 0.45 mA Minimum Output Voltage Measured at OUTA, OUTB, and OUTD 0.5 V Maximum Output Voltage Measured at OUTA, OUTB, and OUTD 1.8 V Difference Output VOUTD P = P = -30dBm 1 V RFINA RFINB OUTD Accuracy 12 mV COMPARATORS V - CC Output High Voltage V R 10k V OH LOAD 10mV Output Low Voltage V R 10k 10 mV OL LOAD GND to Input Voltage Measured at CSETL and CSETH V V CC Input Bias Current CSETL and CSETH 1 nA REFERENCE Output Voltage on Pin 25 R 2k 2V LOAD Load Regulation Source 2mA -5 mV 2 MAX2016