MAX20307 High-Frequency Optimized Configurable eGaN Driver General Description Benefits and Features The MAX20307 is a configurable driver IC for enhancement Flexible/Configurable Gate Drive mode Gallium Nitride (eGaN) FETs, optimized for high- Single Control Input frequency operation. The device is designed to drive both 1A/5A Gate Source/Sink Current the high-side and low-side FETs in a half-bridge topology. The High-Efficiency SMPS Design floating high-side driver is capable of driving a high-side Low Loss Gate Drive: Optimized Bootstrap Circuit eGaN FET operating up to 60V. A synchronous bootstrap Automatic Dead Time Control Optimized for Half- technique provides the high-side bias voltage and is Bridge Converters internally clamped at 5.2V. This clamping prevents the Programmable Maximum Dead Time gate voltage from exceeding the maximum rated gate- 0ns9ns GPIO Controlled source voltage of eGaN FETs. Fast Propagation Delay (22ns) The gate driver input signal is 3.3V TTL logic compatible, Safe Gate Drive and can withstand input voltages up to 6V regardless of High-Side Floating Node Voltage up to 60V the V voltage. Additionally, the MAX20307 features CC Gate Supply Voltage UVLO adaptive dead time control. Space-Saving Design High-frequency H-bridge drive capability and adaptive 0.4mm pitch 1.2mm x 2.0mm WLP dead time control make the MAX20307 ideal for high- efficiency buck applications. TTL logic compatibility allows the INH drive input to operate directly from the outputs of most PWM controllers allowing for flexible design. Ordering Information appears at end of data sheet. The device covers wireless power (transmitting) levels from a few Watts to over 20 Watts making it well suited for wireless charging of various portable devices. High frequency optimization enables the use of wireless charg- ing standards such as A4WP (6.78MHz) and ISM band (13.56MHz) wireless charging. The MAX20307 is available in a space-saving, 15-bump, 1.2 x 2.0mm wafer-level package (WLP) and operate over the -40C to +85C extended temperature range. Applications Switching Power Supply Topology Support Half and Full-Bridge converters Current Fed Push-Pull converters Synchronous Buck converters A4WP Wireless Charging Medical Device Wireless Charging in ISM Band WPC and PMAT 19-100281 Rev 0 3/18MAX20307 High-Frequency Optimized Configurable eGaN Driver Absolute Maximum Ratings (Voltages reference to GND unless otherwise noted) INL, INH, LDTY0, LDTY1, DTP0, DTP1 .................-0.3V to +6V V ..........................................................................-0.3V to +6V Continuous Power Dissipation (T = +70C): CC A V .........................................................................-0.3V to +66V WLP (derate 16.4mW/C above +70C.) ...................1312mW IN LO ................................................................-0.3V to V + 0.3V Operating Temperature Range ........................... -40C to +85C CC HO .....................................................V 0.3V to V + 0.3V Junction Temperature ....................................... -40C to +150C HS HB HB..........................................................................-0.3V to +66V Storage Temperature Range ............................ -40C to +150C HB to V .............................................................-0.3V to +60V Soldering Temperature (reflow) .......................................+260C CC HS..........................................................................-0.3V to +60V (Note 1) Package Thermal Characteristics WLP Junction-to-Ambient Thermal Resistance ( ) ..........52C/W JA Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Electrical Characteristics (V = 4.5 to 5.5V, T = -40C to +85C unless otherwise noted. Typical values are at V = 5V, T = +25C.) (Note 2) CC A CC A PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS V CC Supply Voltage Range V 4.5 5.5 V CC V Quiescent Current I INH = 0V 6 13 mA CC Q V Operating Current I f = 13.56MHz, C = 47pF 35 mA CC CC L V Undervoltage Lockout CC V V Rising 3.1 3.6 3.8 V CC UVLO CC (UVLO) V UVLO Hysteresis V V Falling 0.1 V CC CC UVLOHYS CC eGaN GATE DRIVER LO Output Low LO I = 100mA <0.1 V OUT LOW LO LO Output High LO I = 100mA V 0.5V V OUT HIGH LO CC HO Output Low HO I = 100mA <0.1 V OUT LOW HO HO Output High HO I = 100mA, V = V - V V 0.5V V OUT HIGH HO BS HB HS BS Peak Source Current ON 1 A Peak Sink Current OFF 5 A Maxim Integrated 2 www.maximintegrated.com