ADC MAX2160/MAX2160EBG 19-0068 Rev 5 10/09 ISDB-T Single-Segment Low-IF Tuners General Description Features The MAX2160/EBG tuner ICs are designed for use in Low Noise Figure: < 4dB Typical Japanese mobile digital TV (ISDB-T single-segment) High Dynamic Range: -98dBm to 0dBm applications. The devices directly convert UHF band High-Side or Low-Side LO Injection signals to a low-IF using a broadband I/Q downconvert- er. The operating frequency range extends from Integrated VCO and Tank Circuits 470MHz to 770MHz. Low LO Phase Noise: Typical -88dBc/Hz at 10kHz The MAX2160/EBG support both I/Q low-IF interfaces Integrated Frequency Synthesizer as well as single low-IF interfaces, making the devices Integrated Bandpass Filters universal tuners for various digital demodulator IC implementations. 52dB Typical Image Rejection The MAX2160/EBG include an LNA, RF variable-gain Single +2.7V to +3.3V Supply Voltage amplifiers, I and Q downconverting mixers, low-IF variable- Three Low-Power Modes gain amplifiers, and bandpass filters providing in excess of 2 Two-Wire, I C-Compatible Serial Control Interface 42dB of image rejection. The parts are capable of operat- ing with either high-side or low-side local oscillator (LO) Very Small Lead-Free WLP Package injection. The MAX2160/EBGs variable-gain amplifiers pro- vide in excess of 100dB of gain-control range. Pin Configurations/ The MAX2160/EBG also include fully monolithic VCOs Functional Diagrams and tank circuits, as well as a complete frequency syn- thesizer. The devices include a XTAL oscillator as well as a separate TCXO input buffer. The devices operate TOP VIEW with XTAL/TCXO oscillators from 13MHz to 26MHz allowing the shared use of a VC-TCXO in cellular hand- set applications. Additionally, a divider is provided for 40 39 38 37 36 35 34 33 32 31 the XTAL/TCXO oscillator allowing for simple and low- 1 30 N.C. N.C. FREQUENCY TANK cost interfacing to various channel decoders. SYNTHESIZER 2 29 TCXO VCCBB The MAX2160/EBG are specified for operation from XTAL 3 28 N.C. DIV4 -40C to +85C and available in a 40-pin (6mm x 6mm) GNDXTAL 4 27 QOUT thin QFN lead-free plastic package with exposed pad- dle (EP), and in a 3.175mm x 3.175mm lead-free wafer- 5 26 VCCXTAL GNDBB level package (WLP). 6 25 XTALOUT IOUT Applications VCCDIG 7 24 N.C. MAX2160 Cell Phone Mobile TVs SDA 8 23 GC2 PWRDET Personal Digital Assistants (PDAs) EP SCL 9 22 ENTCXO Pocket TVs 10 21 LTC N.C. 11 12 13 14 15 16 17 18 19 20 Ordering Information TQFN PART TEMP RANGE PIN-PACKAGE MAX2160ETL -40C to +85C 40 Thin Q FN- E P * Pin Configurations/Functional Diagrams continued at end of data sheet. MAX2160ETL+ -40C to +85C 40 Thin Q FN- E P * MAX2160EBG+ -40C to +85C W LP +Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed paddle. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE N.C. GNDCP INTERFACE LOGIC AND CONTROL VCCBIAS VCCCP RFIN CPOUT SHDN TEST N.C. GNDTUNE VTUNE VCCLNA GNDVCO GC1 VCCVCO VCCMX PWRDET VCOBYP VCCFLT N.C.ISDB-T Single-Segment Low-IF Tuners ABSOLUTE MAXIMUM RATINGS All VCC Pins to GND............................................-0.3V to +3.6V Continuous Power Dissipation (T = +70C) A All Other Pins to GND.................................-0.3V to (V + 0.3V) 40-Pin Thin QFN (derate 35.7mW/C above +70C)....2857mW CC RFIN, Maximum RF Input Power ....................................+10dBm WLP (derate 10.8mW/C above +70C).........................704mW ESD Rating...........................................................................1kV Operating Temperature Range ...........................-40C to +85C Short-Circuit Duration Junction Temperature......................................................+150C IOUT, QOUT, CPOUT, XTALOUT, PWRDET, SDA, Storage Temperature Range .............................-65C to +150C TEST, LTC, VCOBYP ...........................................................10s Lead Temperature (soldering, 10s) .................................+300C CAUTION ESD SENSITIVE DEVICE Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (MAX2160 EV kit, V = +2.7V to +3.3V, V = V = 0.3V (maximum gain), no RF input signals at RFIN, baseband I/Os are open CC GC1 GC2 circuited and VCO is active with f = 767.714MHz, registers set according to the recommended default register conditions of LO Tables 211, T = -40C to +85C, unless otherwise noted. Typical values are at V = +2.85V, T = +25C, unless otherwise A CC A noted.) (Note 1) PARAMETER CONDITIONS MIN TYP MAX UNITS SUPPLY Supply Voltage 2.7 2.85 3.3 V Receive mode, SHDN = V , BBL 1:0 = 00 44 53.5 CC mA Standby mode, bit STBY = 1 2 4 Supply Current (See Tables 15 and 16) Power-down mode, bit PWDN = 1, EPD = 0 5 40 A Shutdown mode, SHDN = GND 0 10 ANALOG GAIN-CONTROL INPUTS (GC1, GC2) Input Voltage Range Maximum gain = 0.3V 0.3 2.7 V Input Bias Current -15 +15 A VCO TUNING VOLTAGE INPUT (VTUNE) Input Voltage Range 0.4 2.3 V VTUNE ADC Resolution 3 bits Input Voltage Range 0.3 2.4 V 110 to 111 V - 0.4 CC 101 to 110 1.9 100 to 101 1.7 Reference Ladder Trip Point ADC read bits 011 to 100 1.3 V 010 to 011 0.9 001 to 010 0.6 000 to 001 0.4 LOCK TIME CONSTANT OUTPUT (LTC) Bit LTC = 0 1 Source Current A Bit LTC = 1 2 2 MAX2160/MAX2160EBG