MAX2411A 19-1324 Rev 1 2/98 Low-Cost RF Up/Downconverter with LNA and PA Driver General Description Features The MAX2411A performs the RF front-end transmit/ Low-Cost Silicon Bipolar Design receive function in time-division-duplex (TDD) communi- Integrated Upconvert/Downconvert Function cation systems. It operates over a wide frequency range Operates from a Single +2.7V to +5.5V Supply and is optimized for RF frequencies around 1.9GHz. Applications include most popular cordless and PCS 3.2dB Combined Receiver Noise Figure: standards. The MAX2411A includes a low-noise amplifier 2.4dB (LNA) (LNA), a downconverter mixer, a local-oscillator buffer, an 9.2dB (mixer) upconverter mixer, and a variable-gain power-amplifier Flexible Power-Amplifier Driver: (PA) driver in a low-cost, plastic surface-mount package. 18dBm Output Third-Order Intercept (OIP3) The MAX2411As unique bidirectional, differential IF port 35dB Gain-Control Range reduces cost and component count by allowing the trans- mit and receive paths to share the same IF filter. LO Buffer for Low LO Drive Level The LNA has a 2.4dB typical noise figure and a -10dBm Low Power Consumption: input third-order intercept point (IP3). The downconvert- 60mW Receive er mixer has a low 9.2dB noise figure and 4dBm input 90mW Full-Power Transmit IP3. Image and local-oscillator filtering are implemented 0.3W Shutdown Mode off-chip for maximum flexibility. The PA driver amplifier has 15dB of gain, which can be reduced over a 35dB Flexible Power-Down Modes Compatible with range. Power consumption is only 60mW in receive MAX2510/MAX2511 IF Transceivers mode and 90mW in transmit mode and drops to less than 3W in shutdown mode. Ordering Information For applications requiring separate, single-ended IF PART TEMP. RANGE PIN-PACKAGE input and output ports, refer to the MAX2410 data sheet. For applications requiring only a receive func- MAX2411AEEI -40C to +85C 28 QSOP tion, Maxim offers a low-cost downconverter with LNA MAX2411AE/D -40C to +85C Dice* (see the MAX2406 data sheet). *Dice are specified at T = 25C, DC parameters only. A Applications Pin Configuration PWT1900 DECT DCS1800/PCS1900 ISM-Band Transceivers TOP VIEW PHS/PACS Iridium Handsets GND 1 28 GND LNAIN 2 27 LNAOUT Typical Operating Circuit appears on last page. GND 3 26 GND MAX2411A Functional Diagram GND 4 25 GND V 5 24 RXMXIN CC LNAOUT RXMXIN RXEN 6 23 GND LO 7 22 RX MIXER IF LNAIN LNA LO 8 21 IF IF TXEN 9 20 GND RXEN IF POWER V 10 19 TXMXOUT CC LO MANAGEMENT TXEN MAX2411A LO GC 11 18 GND PA DRIVER PADROUT GND 12 17 GND TX MIXER PADROUT 13 16 PADRIN GND 14 15 GND TXMXOUT GC PADRIN QSOP Maxim Integrated Products 1 For free samples & the latest literature: Low-Cost RF Up/Downconverter with LNA and PA Driver ABSOLUTE MAXIMUM RATINGS V to GND ................................................................-0.3V to 6V Continuous Power Dissipation (T = +70C) CC A LNAIN Input Power ...........................................................15dBm QSOP (derate 11mW/C above +70C)........................909mW LO, LO Input Power ..........................................................10dBm Junction Temperature......................................................+150C PADRIN Input Power.........................................................10dBm Operating Temperature Range ...........................-40C to +85C RXMXIN Input Power ........................................................10dBm Storage Temperature.........................................-65C to +165C IF, IF Input Power (transmit mode) ...................................10dBm Lead Temperature (soldering, 10sec) .............................+300C Voltage at RXEN, TXEN, GC.......................-0.3V to (V + 0.3V) CC Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (V = +2.7V to +5.5V, V = +3.0V, RXEN = TXEN = 0.6V, PADROUT pulled up to V with 50 resistor IF, IF pulled up to V CC GC CC CC with 50 resistor, TXMXOUT pulled up to V with 125 resistor, LNAOUT pulled up to V with 100 resistor, all RF inputs open, CC CC T = -40C to +85C. Typical values are at +25C and V = +3.0V, unless otherwise noted.) A CC PARAMETER CONDITIONS MIN TYP MAX UNITS Supply-Voltage Range 2.7 5.5 V Digital Input Voltage High RXEN, TXEN pins 2.0 V Digital Input Voltage Low RXEN, TXEN pins 0.6 V RXEN Input Bias Current (Note 1) RXEN = 2.0V 0.1 1 A TXEN Input Bias Current (Note 1) TXEN = 2.0V 0.1 1 A GC Input Bias Current GC = 3V, TXEN = 2V 35 51.1 A Supply Current, Receive Mode RXEN = 2.0V 20 29.6 mA Supply Current, Transmit Mode TXEN = 2.0V 30 44.7 mA Supply Current, Standby Mode RXEN = 2.0V, TXEN = 2.0V 160 520 A Supply Current, Shutdown Mode V = 3.0V 0.1 10 A CC AC ELECTRICAL CHARACTERISTICS (MAX2411A EV kit, V = +3.0V, V = +2.15V, RXEN = TXEN = low, all measurements performed in 50 environment, CC GC f = 1.5GHz, P = -10dBm, f = f = f = 1.9GHz, P = -32dBm, P = P = -22dBm, LO LO LNAIN PADRIN RXMXIN LNAIN PADRIN RXMXIN f = 400MHz, P = -32dBm (Note 1), T = +25C, unless otherwise noted.) IF, IF IF A PARAMETER CONDITIONS MIN TYP MAX UNITS LOW-NOISE AMPLIFIER (RXEN = high) T = +25C 14.2 16.2 17.4 A Gain (Note 2) dB T = T to T 12.6 19.1 A MIN MAX Noise Figure 2.4 dB Input IP3 (Note 3) -10 dBm Output 1dB Compression -5 dBm LO to LNAIN Leakage RXEN = high or low -49 dBm RECEIVE MIXER (RXEN = high) T = +25C 8.5 9.4 10.0 A Conversion Gain (Note 2) dB T = -40C to +85C 7.5 10.9 A Noise Figure Single sideband 9.2 dB Input IP3 (Note 4) 4.0 dBm Input 1dB Compression -7.7 dBm IF Frequency (Notes 2, 5) 450 MHz Minimum LO Drive Level (Note 6) -17 dBm 2 MAX2411A